Paper Abstract and Keywords |
Presentation |
2008-01-16 16:15
10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 Link to ES Tech. Rep. Archives: ED2007-213 MW2007-144 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick poly-crystalline AlN (poly-AlN) passivation. Extremely high blocking voltage (BVds) of 10400V is achieved while maintaining relative low specific on-state resistance (Ron•A) of 186mohm•cm2.Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation. The obtained blocking voltage of 10400V is the highest value ever reported for GaN-based transistors |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / high breakdown voltage / sapphire substrate / via-hole / field plate / high power switching device / low specific on-state resistance / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 420, ED2007-213, pp. 39-43, Jan. 2008. |
Paper # |
ED2007-213 |
Date of Issue |
2008-01-09 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-213 MW2007-144 Link to ES Tech. Rep. Archives: ED2007-213 MW2007-144 |
Conference Information |
Committee |
ED MW |
Conference Date |
2008-01-16 - 2008-01-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor IC, High-speed and high-frequency devices |
Paper Information |
Registration To |
ED |
Conference Code |
2008-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
10400V Blocking Voltage AlGaN/GaN Power HFET |
Sub Title (in English) |
|
Keyword(1) |
GaN |
Keyword(2) |
high breakdown voltage |
Keyword(3) |
sapphire substrate |
Keyword(4) |
via-hole |
Keyword(5) |
field plate |
Keyword(6) |
high power switching device |
Keyword(7) |
low specific on-state resistance |
Keyword(8) |
|
1st Author's Name |
Daisuke Shibata |
1st Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
2nd Author's Name |
Yasuhiro Uemoto |
2nd Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
3rd Author's Name |
Manabu Yanagihara |
3rd Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
4th Author's Name |
Hidetoshi Ishida |
4th Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
5th Author's Name |
Shuichi Nagai |
5th Author's Affiliation |
Panasonic Boston Laboratory (Panasonic Boston Lab.) |
6th Author's Name |
Hisayoshi Matsuo |
6th Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
7th Author's Name |
Ming Li |
7th Author's Affiliation |
Panasonic Boston Laboratory (Panasonic Boston Lab.) |
8th Author's Name |
Tetsuzo Ueda |
8th Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
9th Author's Name |
Tsuyoshi Tanaka |
9th Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
10th Author's Name |
Daisuke Ueda |
10th Author's Affiliation |
Matsushita Electric Industrial Co.,Ltd. (Panasonic) |
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Speaker |
Author-1 |
Date Time |
2008-01-16 16:15:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-213, MW2007-144 |
Volume (vol) |
vol.107 |
Number (no) |
no.420(ED), no.421(MW) |
Page |
pp.39-43 |
#Pages |
5 |
Date of Issue |
2008-01-09 (ED, MW) |
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