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Paper Abstract and Keywords
Presentation 2008-01-16 16:15
10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 Link to ES Tech. Rep. Archives: ED2007-213 MW2007-144
Abstract (in Japanese) (See Japanese page) 
(in English) We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick poly-crystalline AlN (poly-AlN) passivation. Extremely high blocking voltage (BVds) of 10400V is achieved while maintaining relative low specific on-state resistance (Ron•A) of 186mohm•cm2.Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation. The obtained blocking voltage of 10400V is the highest value ever reported for GaN-based transistors
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / high breakdown voltage / sapphire substrate / via-hole / field plate / high power switching device / low specific on-state resistance /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 420, ED2007-213, pp. 39-43, Jan. 2008.
Paper # ED2007-213 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-213 MW2007-144 Link to ES Tech. Rep. Archives: ED2007-213 MW2007-144

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2008-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 10400V Blocking Voltage AlGaN/GaN Power HFET 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) high breakdown voltage  
Keyword(3) sapphire substrate  
Keyword(4) via-hole  
Keyword(5) field plate  
Keyword(6) high power switching device  
Keyword(7) low specific on-state resistance  
Keyword(8)  
1st Author's Name Daisuke Shibata  
1st Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
2nd Author's Name Yasuhiro Uemoto  
2nd Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
3rd Author's Name Manabu Yanagihara  
3rd Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
4th Author's Name Hidetoshi Ishida  
4th Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
5th Author's Name Shuichi Nagai  
5th Author's Affiliation Panasonic Boston Laboratory (Panasonic Boston Lab.)
6th Author's Name Hisayoshi Matsuo  
6th Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
7th Author's Name Ming Li  
7th Author's Affiliation Panasonic Boston Laboratory (Panasonic Boston Lab.)
8th Author's Name Tetsuzo Ueda  
8th Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
9th Author's Name Tsuyoshi Tanaka  
9th Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
10th Author's Name Daisuke Ueda  
10th Author's Affiliation Matsushita Electric Industrial Co.,Ltd. (Panasonic)
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Speaker Author-1 
Date Time 2008-01-16 16:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-213, MW2007-144 
Volume (vol) vol.107 
Number (no) no.420(ED), no.421(MW) 
Page pp.39-43 
#Pages
Date of Issue 2008-01-09 (ED, MW) 


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