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| Presentation | 2007-12-14 14:10 Axial orientation of epitaxially grown Fe3Si on Ge(111) Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.)  SDM2007-230 Link to ES Tech. Rep. Archives: SDM2007-230 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The axial orientation of epitaxially grown Fe3Si on Ge(111) has been investigated by Rutherford Backscattering spectroscopy. It has been reported that the axial orientation is highly dependent on growth temperature (TG), and that the degradation of axial orientation is caused above TG=200oC. In this study, we have investigated the axial orientation of Fe3Si/Ge(111) grown at 200oC by electron diffraction and measurement of channel dip curves. We found that the degradation of axial orientation observed at TG=200oC was attributed mainly to the tilt of Fe3Si<111> axis. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Epitaxial growth / Fe3Si / Rutherford backscattering spectroscopy / Electron diffraction / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 388, SDM2007-230, pp. 35-38, Dec. 2007. | |
| Paper # | SDM2007-230 | |
| Date of Issue | 2007-12-07 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-230 Link to ES Tech. Rep. Archives: SDM2007-230 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-12-14 - 2007-12-14 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nara Institute Science and Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Silicon related material, process and device |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Axial orientation of epitaxially grown Fe3Si on Ge(111) |
| Sub Title (in English) | |
| Keyword(1) | Epitaxial growth |
| Keyword(2) | Fe3Si |
| Keyword(3) | Rutherford backscattering spectroscopy |
| Keyword(4) | Electron diffraction |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yusuke Hiraiwa |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Yu-ichiro Ando |
| 2nd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 3rd Author's Name | Mamoru Kumano |
| 3rd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 4th Author's Name | Koji Ueda |
| 4th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 5th Author's Name | Taizoh Sadoh |
| 5th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 6th Author's Name | Masanobu Miyao |
| 6th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 7th Author's Name | Kazumasa Narumi |
| 7th Author's Affiliation | Japan Atomic Energy Agency (JAEA) |
| 8th Author's Name | Yoshihito Maeda |
| 8th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-12-14 14:10:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2007-230 |
| Volume (vol) | vol.107 |
| Number (no) | no.388 |
| Page | pp.35-38 |
| #Pages | 4 |
| Date of Issue | 2007-12-07 (SDM) |
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