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Paper Abstract and Keywords
Presentation 2007-12-14 13:50
Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method
Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) SDM2007-229 Link to ES Tech. Rep. Archives: SDM2007-229
Abstract (in Japanese) (See Japanese page) 
(in English) We succeeded in the observation of dislocation motion in a thin Si1-xGex film (thickness = 56 nm and x = 0.24) on a Si substrate by the light scattering method. The SiGe film is too thin for the observation of dislocation by the etching method. The mobility of dislocation was measured between 580℃ and 375℃ by using the light scattering method and was found to be described by an Arrhenius plot with an activation energy of 1.89 eV in the above mentioned temperature range. This result may indicate a sustained dislocation motion at a temperature lower than 375℃.
Keyword (in Japanese) (See Japanese page) 
(in English) SiGe / Si / dislocation / misfit / light scattering / mobility / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 388, SDM2007-229, pp. 31-34, Dec. 2007.
Paper # SDM2007-229 
Date of Issue 2007-12-07 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-229 Link to ES Tech. Rep. Archives: SDM2007-229

Conference Information
Committee SDM  
Conference Date 2007-12-14 - 2007-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Nara Institute Science and Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Silicon related material, process and device 
Paper Information
Registration To SDM 
Conference Code 2007-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method 
Sub Title (in English)  
Keyword(1) SiGe  
Keyword(2) Si  
Keyword(3) dislocation  
Keyword(4) misfit  
Keyword(5) light scattering  
Keyword(6) mobility  
Keyword(7)  
Keyword(8)  
1st Author's Name Akito Hara  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Naoyoshi Tamura  
2nd Author's Affiliation Fujitsu Lab. Ltd. (Fujitsu Lab. Ltd.)
3rd Author's Name Tomoji Nakamura  
3rd Author's Affiliation Fujitsu Lab. Ltd. (Fujitsu Lab. Ltd.)
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Speaker Author-1 
Date Time 2007-12-14 13:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2007-229 
Volume (vol) vol.107 
Number (no) no.388 
Page pp.31-34 
#Pages
Date of Issue 2007-12-07 (SDM) 


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