Paper Abstract and Keywords |
Presentation |
2007-12-14 13:50
Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) SDM2007-229 Link to ES Tech. Rep. Archives: SDM2007-229 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We succeeded in the observation of dislocation motion in a thin Si1-xGex film (thickness = 56 nm and x = 0.24) on a Si substrate by the light scattering method. The SiGe film is too thin for the observation of dislocation by the etching method. The mobility of dislocation was measured between 580℃ and 375℃ by using the light scattering method and was found to be described by an Arrhenius plot with an activation energy of 1.89 eV in the above mentioned temperature range. This result may indicate a sustained dislocation motion at a temperature lower than 375℃. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiGe / Si / dislocation / misfit / light scattering / mobility / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 388, SDM2007-229, pp. 31-34, Dec. 2007. |
Paper # |
SDM2007-229 |
Date of Issue |
2007-12-07 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2007-229 Link to ES Tech. Rep. Archives: SDM2007-229 |
Conference Information |
Committee |
SDM |
Conference Date |
2007-12-14 - 2007-12-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nara Institute Science and Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Silicon related material, process and device |
Paper Information |
Registration To |
SDM |
Conference Code |
2007-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method |
Sub Title (in English) |
|
Keyword(1) |
SiGe |
Keyword(2) |
Si |
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dislocation |
Keyword(4) |
misfit |
Keyword(5) |
light scattering |
Keyword(6) |
mobility |
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Keyword(8) |
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1st Author's Name |
Akito Hara |
1st Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
2nd Author's Name |
Naoyoshi Tamura |
2nd Author's Affiliation |
Fujitsu Lab. Ltd. (Fujitsu Lab. Ltd.) |
3rd Author's Name |
Tomoji Nakamura |
3rd Author's Affiliation |
Fujitsu Lab. Ltd. (Fujitsu Lab. Ltd.) |
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Speaker |
Author-1 |
Date Time |
2007-12-14 13:50:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2007-229 |
Volume (vol) |
vol.107 |
Number (no) |
no.388 |
Page |
pp.31-34 |
#Pages |
4 |
Date of Issue |
2007-12-07 (SDM) |