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| Presentation | 2007-12-14 15:10 Interface modification by NH3 plasma in SiNx passivation for solar cell Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST)  SDM2007-232 Link to ES Tech. Rep. Archives: SDM2007-232 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The effect of NH3 plasma treatment on p-type (Fz) Si substrates was investigated relating with the post annealing process. NH3 plasma treatment before the low temperature deposition of silicon nitride (SiNx) by plasma-enhanced chemical vapor deposition (PECVD) was found to be effective to improve the surface passivation. The effective lifetime with NH3 plasma-treatment exceeded the effective lifetime without the NH3 treatment. For fire through process and the new process, like laser fired contacts (LFC), thermal resistance of passivation processes investigated. In the result of NH3 plasma-treatment, outstanding surface passivation for high efficiency thin silicon solar cells was obtained using SiN films deposited at low temperatures. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Solar cell / SiNx / Passivation / NH3 plasma treatment / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 388, SDM2007-232, pp. 43-46, Dec. 2007. | |
| Paper # | SDM2007-232 | |
| Date of Issue | 2007-12-07 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-232 Link to ES Tech. Rep. Archives: SDM2007-232 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-12-14 - 2007-12-14 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nara Institute Science and Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Silicon related material, process and device |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interface modification by NH3 plasma in SiNx passivation for solar cell |
| Sub Title (in English) | |
| Keyword(1) | Solar cell |
| Keyword(2) | SiNx |
| Keyword(3) | Passivation |
| Keyword(4) | NH3 plasma treatment |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yuki Kishiyama |
| 1st Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 2nd Author's Name | Yu Takahashi |
| 2nd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 3rd Author's Name | Akiyoshi Ogane |
| 3rd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 4th Author's Name | Athapol Kitiyanan |
| 4th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 5th Author's Name | Yukiharu Uraoka |
| 5th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 6th Author's Name | Takashi Fuyuki |
| 6th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
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| Speaker | Author-1 |
| Date Time | 2007-12-14 15:10:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2007-232 |
| Volume (vol) | vol.107 |
| Number (no) | no.388 |
| Page | pp.43-46 |
| #Pages | 4 |
| Date of Issue | 2007-12-07 (SDM) |
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