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| Presentation | 2007-12-14 16:20 Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)  SDM2007-233 Link to ES Tech. Rep. Archives: SDM2007-233 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. A mesa structure was formed by reactive ion etching (RIE) with a ${\rm SiO_2}$ mask. An improved bevel mesa structure has a nearly vertical side-wall at the edge of pn junction and a rounded corner at mesa bottom. Thick ${\rm n^{-}}$-drift layers (concentration: ${\rm 3～7\times 10^{14}\ cm^{-3}}$, thickness: 90~100 ${\rm \mu m}$) have been formed by horizontal hot-wall CVD with a high growth rate of 45 ${\rm \mu m}$. The p-anode and junction termination extension (JTE) region were formed by Al ion implantation. The JTE dose and JTE width have been optimized by device simulation. Simulated breakdown voltage has been compared with experimental results. The locations of electric field crowding and diode breakdown have been also discussed. A PiN diode with improved bevel mesa structure and optimum JTE dose exhibited a high blocking voltage of 10.2 kV. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon carbide / PiN / Bevel mesa / JTE / Device simulation / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 388, SDM2007-233, pp. 47-50, Dec. 2007. | |
| Paper # | SDM2007-233 | |
| Date of Issue | 2007-12-07 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-233 Link to ES Tech. Rep. Archives: SDM2007-233 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-12-14 - 2007-12-14 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nara Institute Science and Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Silicon related material, process and device |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | PiN |
| Keyword(3) | Bevel mesa |
| Keyword(4) | JTE |
| Keyword(5) | Device simulation |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toru Hiyoshi |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Tsutomu Hori |
| 2nd Author's Affiliation | Hitachi Metals, Ltd. (Hitachi) |
| 3rd Author's Name | Jun Suda |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Tsunenobu Kimoto |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-12-14 16:20:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2007-233 |
| Volume (vol) | vol.107 |
| Number (no) | no.388 |
| Page | pp.47-50 |
| #Pages | 4 |
| Date of Issue | 2007-12-07 (SDM) |
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