Paper Abstract and Keywords |
Presentation |
2007-12-14 16:40
Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) SDM2007-234 Link to ES Tech. Rep. Archives: SDM2007-234 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Charge-pumping measurements were conducted on n-channel and p-channel 4H-SiC MOSFET’s with and without NO annealing. The measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFET’s and is especially large in the unannealed n-channel 4H-SiC MOSFET’s with low channel mobility. In addition, influence of interface-trapped charges is large in the unannealed 4H-SiC MOSFET’s. The charge-pumping curves are distorted by these two non-ideal effects, and therefore, the analysis of the charge-pumping curves is difficult. A sufficiently long fall-time is needed to minimize the effect of geometric component. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / MOS interface / Charge pumping / Interface trapped charges / NO annealing / Geometric component / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 388, SDM2007-234, pp. 51-54, Dec. 2007. |
Paper # |
SDM2007-234 |
Date of Issue |
2007-12-07 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2007-234 Link to ES Tech. Rep. Archives: SDM2007-234 |