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Paper Abstract and Keywords
Presentation 2007-11-17 10:15
Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias.
Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2007-118 Link to ES Tech. Rep. Archives: CPM2007-118
Abstract (in Japanese) (See Japanese page) 
(in English) Nitride layer was formed on the surface of 4H-SiC by plasma assisted nitridation. The XPS measurement suggested that the thickness of nitride layer increase as increasing RF power during nitridation and decreasing reaction pressure. The cross sectional TEM observation indicated that the thickness of surface nitride layer was 2 $\sim $ 5 nm when the sample was prepared by plasma assisted nitridation with DC bias of -100 V. Interface state density was $10^{12} \sim 10^{13}$eV$^{-1}$cm$^{-2}$, and was higher than the value for the sample prepared without DC bias.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / plasma / nitride film / MOS device / DC bias / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 325, CPM2007-118, pp. 69-72, Nov. 2007.
Paper # CPM2007-118 
Date of Issue 2007-11-09 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2007-118 Link to ES Tech. Rep. Archives: CPM2007-118

Conference Information
Committee CPM  
Conference Date 2007-11-16 - 2007-11-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagaoka University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2007-11-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias. 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) plasma  
Keyword(3) nitride film  
Keyword(4) MOS device  
Keyword(5) DC bias  
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Keyword(8)  
1st Author's Name Yoshiki Ishida  
1st Author's Affiliation Shinshu University (Shinshu Univ.)
2nd Author's Name Chen Chen  
2nd Author's Affiliation Shinshu University (Shinshu Univ.)
3rd Author's Name Masataka Hagihara  
3rd Author's Affiliation Shinshu University (Shinshu Univ.)
4th Author's Name Hiroaki Shiozawa  
4th Author's Affiliation Shinshu University (Shinshu Univ.)
5th Author's Name Akira Sengoku  
5th Author's Affiliation Shinshu University (Shinshu Univ.)
6th Author's Name Rinpei Hayashibe  
6th Author's Affiliation Shinshu University (Shinshu Univ.)
7th Author's Name Tomohiko Yamakami  
7th Author's Affiliation Shinshu University (Shinshu Univ.)
8th Author's Name Kiichi Kamimura  
8th Author's Affiliation Shinshu University (Shinshu Univ.)
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Speaker Author-1 
Date Time 2007-11-17 10:15:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2007-118 
Volume (vol) vol.107 
Number (no) no.325 
Page pp.69-72 
#Pages
Date of Issue 2007-11-09 (CPM) 


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