Paper Abstract and Keywords |
Presentation |
2007-11-17 10:15
Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias. Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2007-118 Link to ES Tech. Rep. Archives: CPM2007-118 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Nitride layer was formed on the surface of 4H-SiC by plasma assisted nitridation. The XPS measurement suggested that the thickness of nitride layer increase as increasing RF power during nitridation and decreasing reaction pressure. The cross sectional TEM observation indicated that the thickness of surface nitride layer was 2 $\sim $ 5 nm when the sample was prepared by plasma assisted nitridation with DC bias of -100 V. Interface state density was $10^{12} \sim 10^{13}$eV$^{-1}$cm$^{-2}$, and was higher than the value for the sample prepared without DC bias. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / plasma / nitride film / MOS device / DC bias / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 325, CPM2007-118, pp. 69-72, Nov. 2007. |
Paper # |
CPM2007-118 |
Date of Issue |
2007-11-09 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
CPM2007-118 Link to ES Tech. Rep. Archives: CPM2007-118 |