Paper Abstract and Keywords |
Presentation |
2007-11-16 12:55
Fabrication and characterization of Bi-based high-Tc superconductor devices Takashi Yoshida, Hiroaki Nawa, Hayataka Tominaga, Atsushi Miwa, Takahiro Kato, Katsuyoshi Hamasaki (NUT), Hisashi Shimakage (NICT) CPM2007-106 Link to ES Tech. Rep. Archives: CPM2007-106 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
FIB (Focused Ion Beam) and double-side fabrication techniques were widely used to fabricate intrinsic Josephson junctions (IJJs) inside Bi-2212 single crystals. Main feature of such technique is able to remove the contact resistance of the Bi-2212/Au (or Ag). We have previously fabricated self-planarized Bi-2212 IJJs using acid-treated process. In this process, the Bi-2212 single crystal around the stack is varied to transparent and insulating material by soaking it into the dilute hydrochloric acid (pH≧1.4). In this study, we developed a new process to fabricate the IJJs inside the crystal using the transparent material. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
intrinsic Josephson junctions(IJJs) / acid-treated process / IJJs inside Bi-2212 single crystal / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 325, CPM2007-106, pp. 7-11, Nov. 2007. |
Paper # |
CPM2007-106 |
Date of Issue |
2007-11-09 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
CPM2007-106 Link to ES Tech. Rep. Archives: CPM2007-106 |