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Paper Abstract and Keywords
Presentation 2007-11-16 13:50
Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water
Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) R2007-48 ED2007-181 SDM2007-216 Link to ES Tech. Rep. Archives: ED2007-181 SDM2007-216
Abstract (in Japanese) (See Japanese page) 
(in English) The field effect transistor (FET) devices on Silicon Carbide (SiC) and Gallium nitride (GaN), which have a wide bandgap, are under development to realize high power operation. In order to improve the performance of FET, the formation of gate insulator film on semiconductor is a serious issue. High temperature and long time are required to oxidize SiC and GaN by the conventional thermal dry oxidation. We have investigated the SiC and GaN oxidation process using high pressure and high temperature water, so that the SiC and GaN oxidation could be done at low temperature. In this paper, we firstly report that 50nm oxide film is formed on SiC surface by the supercritical water oxidation (400℃, 25 MPa, 1 hour). We also found that the stoichiometric Ga2O3 layer is formed on GaN surface by the supercritical water oxidation (400℃, 25MPa).
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / GaN / FET / oxide / supercritical water / subcritical water / high pressure / high temperature  
Reference Info. IEICE Tech. Rep., vol. 107, no. 319, ED2007-181, pp. 13-17, Nov. 2007.
Paper # ED2007-181 
Date of Issue 2007-11-09 (R, ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF R2007-48 ED2007-181 SDM2007-216 Link to ES Tech. Rep. Archives: ED2007-181 SDM2007-216

Conference Information
Committee SDM R ED  
Conference Date 2007-11-16 - 2007-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-11-SDM-R-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) GaN  
Keyword(3) FET  
Keyword(4) oxide  
Keyword(5) supercritical water  
Keyword(6) subcritical water  
Keyword(7) high pressure  
Keyword(8) high temperature  
1st Author's Name Takashi Futatsuki  
1st Author's Affiliation Organo Corporation (Organo Corp.)
2nd Author's Name Taro Oe  
2nd Author's Affiliation Organo Corporation (Organo Corp.)
3rd Author's Name Hidemitsu Aoki  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Naoyoshi Komatsu  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Chiharu Kimura  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Takashi Sugino  
6th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker
Date Time 2007-11-16 13:50:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-R2007-48,IEICE-ED2007-181,IEICE-SDM2007-216 
Volume (vol) IEICE-107 
Number (no) no.318(R), no.319(ED), no.320(SDM) 
Page pp.13-17 
#Pages IEICE-5 
Date of Issue IEICE-R-2007-11-09,IEICE-ED-2007-11-09,IEICE-SDM-2007-11-09 


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