Paper Abstract and Keywords |
Presentation |
2007-10-30 15:50
Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203 Link to ES Tech. Rep. Archives: SDM2007-203 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed a system consisting of a full-3D process simulator for stress calculation and k·pband calculation that takes into account the subband structure. Our simulations are in good agreement with the experimental data of strained Si-pMOSFETs of 65nm technology devices. This system is a powerful tool to optimize device structures with all stress components. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
strain / stress / PMOS / kp method / 65nm / simulation / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 297, SDM2007-203, pp. 43-46, Oct. 2007. |
Paper # |
SDM2007-203 |
Date of Issue |
2007-10-23 (VLD, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
VLD2007-59 SDM2007-203 Link to ES Tech. Rep. Archives: SDM2007-203 |
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