Paper Abstract and Keywords |
Presentation |
2007-10-19 14:25
Raman Spectroscopy of Si Indents Masahiro Yanagisawa, Nobuhiro Kubo, Kaoruho Sakata, Masahiro Kato, Takayuki Homma, Tetsuya Osaka (Waseda Univ.) EMD2007-64 Link to ES Tech. Rep. Archives: EMD2007-64 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Raman imaging was carried out to measure strain mapping at around indented Si surfaces. Two or three Raman peaks of Si were observed at swells around the triangular indentation dimple made by Berkovich type indenter. On the other hand, single Raman peak with high Raman shift was observed at the center of indentation. Raman shift images of the indentation reveal that there are compressive strain at the center of dimple and tensile strain at the swelled surroundings. The peak separation is induced by biaxial or triaxial stresses during the indentation process. Calculated strain images using FEM (Finite Element Method) showed good agreement with the experimental results |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Raman Spectroscopy / Silicon / Indentation / Strain / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 272, EMD2007-64, pp. 51-54, Oct. 2007. |
Paper # |
EMD2007-64 |
Date of Issue |
2007-10-12 (EMD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EMD2007-64 Link to ES Tech. Rep. Archives: EMD2007-64 |
Conference Information |
Committee |
EMD |
Conference Date |
2007-10-19 - 2007-10-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Keio Univ. Hiyoshi Campus |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Tribology, etc |
Paper Information |
Registration To |
EMD |
Conference Code |
2007-10-EMD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Raman Spectroscopy of Si Indents |
Sub Title (in English) |
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Keyword(1) |
Raman Spectroscopy |
Keyword(2) |
Silicon |
Keyword(3) |
Indentation |
Keyword(4) |
Strain |
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1st Author's Name |
Masahiro Yanagisawa |
1st Author's Affiliation |
Waseda University (Waseda Univ.) |
2nd Author's Name |
Nobuhiro Kubo |
2nd Author's Affiliation |
Waseda University (Waseda Univ.) |
3rd Author's Name |
Kaoruho Sakata |
3rd Author's Affiliation |
Waseda University (Waseda Univ.) |
4th Author's Name |
Masahiro Kato |
4th Author's Affiliation |
Waseda University (Waseda Univ.) |
5th Author's Name |
Takayuki Homma |
5th Author's Affiliation |
Waseda University (Waseda Univ.) |
6th Author's Name |
Tetsuya Osaka |
6th Author's Affiliation |
Waseda University (Waseda Univ.) |
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Speaker |
Author-1 |
Date Time |
2007-10-19 14:25:00 |
Presentation Time |
25 minutes |
Registration for |
EMD |
Paper # |
EMD2007-64 |
Volume (vol) |
vol.107 |
Number (no) |
no.272 |
Page |
pp.51-54 |
#Pages |
4 |
Date of Issue |
2007-10-12 (EMD) |