Paper Abstract and Keywords |
Presentation |
2007-10-12 12:05
Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73 Link to ES Tech. Rep. Archives: ED2007-172 CPM2007-98 LQE2007-73 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 23.04 mm gate periphery exhibits output power of over 50W with a power added efficiency (PAE) of 16.5% under VDS=30V, CW operating condition at 13.5GHz. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / GaN / HEMT / Ku-band / 50W / high power / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 251, ED2007-172, pp. 81-84, Oct. 2007. |
Paper # |
ED2007-172 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-172 CPM2007-98 LQE2007-73 Link to ES Tech. Rep. Archives: ED2007-172 CPM2007-98 LQE2007-73 |
Conference Information |
Committee |
CPM ED LQE |
Conference Date |
2007-10-11 - 2007-10-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Fukui Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2007-10-CPM-ED-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Ku-band AlGaN/GaN HEMTs with 50W Output Power |
Sub Title (in English) |
|
Keyword(1) |
AlGaN |
Keyword(2) |
GaN |
Keyword(3) |
HEMT |
Keyword(4) |
Ku-band |
Keyword(5) |
50W |
Keyword(6) |
high power |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yasushi Kashiwabara |
1st Author's Affiliation |
Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba) |
2nd Author's Name |
Shigenori Takagi |
2nd Author's Affiliation |
Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba) |
3rd Author's Name |
Kazutoshi Masuda |
3rd Author's Affiliation |
Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba) |
4th Author's Name |
Keiichi Matsushita |
4th Author's Affiliation |
Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba) |
5th Author's Name |
Ken Onodera |
5th Author's Affiliation |
Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba) |
6th Author's Name |
Kazutaka Takagi |
6th Author's Affiliation |
Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba) |
7th Author's Name |
Hisao Kawasaki |
7th Author's Affiliation |
Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba) |
8th Author's Name |
Yoshiharu Takada |
8th Author's Affiliation |
Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation (Toshiba) |
9th Author's Name |
Kunio Tsuda |
9th Author's Affiliation |
Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation (Toshiba) |
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Speaker |
Author-1 |
Date Time |
2007-10-12 12:05:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-172, CPM2007-98, LQE2007-73 |
Volume (vol) |
vol.107 |
Number (no) |
no.251(ED), no.252(CPM), no.253(LQE) |
Page |
pp.81-84 |
#Pages |
4 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
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