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Paper Abstract and Keywords
Presentation 2007-10-12 12:05
Ku-band AlGaN/GaN HEMTs with 50W Output Power
Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73 Link to ES Tech. Rep. Archives: ED2007-172 CPM2007-98 LQE2007-73
Abstract (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 23.04 mm gate periphery exhibits output power of over 50W with a power added efficiency (PAE) of 16.5% under VDS=30V, CW operating condition at 13.5GHz.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / GaN / HEMT / Ku-band / 50W / high power / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 251, ED2007-172, pp. 81-84, Oct. 2007.
Paper # ED2007-172 
Date of Issue 2007-10-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-172 CPM2007-98 LQE2007-73 Link to ES Tech. Rep. Archives: ED2007-172 CPM2007-98 LQE2007-73

Conference Information
Committee CPM ED LQE  
Conference Date 2007-10-11 - 2007-10-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2007-10-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ku-band AlGaN/GaN HEMTs with 50W Output Power 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) GaN  
Keyword(3) HEMT  
Keyword(4) Ku-band  
Keyword(5) 50W  
Keyword(6) high power  
Keyword(7)  
Keyword(8)  
1st Author's Name Yasushi Kashiwabara  
1st Author's Affiliation Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
2nd Author's Name Shigenori Takagi  
2nd Author's Affiliation Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
3rd Author's Name Kazutoshi Masuda  
3rd Author's Affiliation Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
4th Author's Name Keiichi Matsushita  
4th Author's Affiliation Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
5th Author's Name Ken Onodera  
5th Author's Affiliation Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
6th Author's Name Kazutaka Takagi  
6th Author's Affiliation Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
7th Author's Name Hisao Kawasaki  
7th Author's Affiliation Microwave Solid-state Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
8th Author's Name Yoshiharu Takada  
8th Author's Affiliation Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation (Toshiba)
9th Author's Name Kunio Tsuda  
9th Author's Affiliation Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2007-10-12 12:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-172, CPM2007-98, LQE2007-73 
Volume (vol) vol.107 
Number (no) no.251(ED), no.252(CPM), no.253(LQE) 
Page pp.81-84 
#Pages
Date of Issue 2007-10-04 (ED, CPM, LQE) 


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