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| Presentation | 2007-10-12 14:40 Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST)  ED2007-175 CPM2007-101 LQE2007-76 Link to ES Tech. Rep. Archives: ED2007-175 CPM2007-101 LQE2007-76 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to clarify RF-MBE growth mechanism of ultrathin InN on Ga-polarity GaN, we investigated tolal supply of InN dependence on InN well thickness, and performed in-situ and real time monitoring and analyzing of InN growth and desorption process. We found that InN well thickness was independent of total supply of InN and self-limited to less than 2ML. The self-limiting system in thickness of InN well was due to GaN matrix effect. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Indium nitride / Quantum well / Self-limiting / in-situ monitoring / RF-MBE / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 253, LQE2007-76, pp. 93-96, Oct. 2007. | |
| Paper # | LQE2007-76 | |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-175 CPM2007-101 LQE2007-76 Link to ES Tech. Rep. Archives: ED2007-175 CPM2007-101 LQE2007-76 |
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| Conference Information | |
| Committee | CPM ED LQE |
| Conference Date | 2007-10-11 - 2007-10-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukui Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2007-10-CPM-ED-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices |
| Sub Title (in English) | |
| Keyword(1) | Indium nitride |
| Keyword(2) | Quantum well |
| Keyword(3) | Self-limiting |
| Keyword(4) | in-situ monitoring |
| Keyword(5) | RF-MBE |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Naoki Hashimoto |
| 1st Author's Affiliation | Chiba University (Chiba Univ.) |
| 2nd Author's Name | Akihiko Yuki |
| 2nd Author's Affiliation | Chiba University (Chiba Univ.) |
| 3rd Author's Name | Hideyuki Saito |
| 3rd Author's Affiliation | Chiba University (Chiba Univ.) |
| 4th Author's Name | Xinqiang Wang |
| 4th Author's Affiliation | JST (JST) |
| 5th Author's Name | Song-Bek Che |
| 5th Author's Affiliation | Chiba University/JST (Chiba Univ./JST) |
| 6th Author's Name | Yoshihiro Ishitani |
| 6th Author's Affiliation | Chiba University/JST (Chiba Univ./JST) |
| 7th Author's Name | Akihiko Yoshikawa |
| 7th Author's Affiliation | Chiba University/JST (Chiba Univ./JST) |
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| Speaker | Author-1 |
| Date Time | 2007-10-12 14:40:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2007-175, CPM2007-101, LQE2007-76 |
| Volume (vol) | vol.107 |
| Number (no) | no.251(ED), no.252(CPM), no.253(LQE) |
| Page | pp.93-96 |
| #Pages | 4 |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) |
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