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Paper Abstract and Keywords
Presentation 2007-10-12 09:00
Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs
Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui) ED2007-165 CPM2007-91 LQE2007-66 Link to ES Tech. Rep. Archives: ED2007-165 CPM2007-91 LQE2007-66
Abstract (in Japanese) (See Japanese page) 
(in English) We have theoretically analyzed the electric field distribution for multi-step and graded Field Plate (FP) AlGaN/GaN HEMTs based on an ensemble Monte Carlo 2D device simulation. The concept of multi-step FP structure was proved to be effective for improving the breakdown voltage of AlGaN/GaN HEMTs. It was demonstrated that the electric field distribution of the graded FP structure is more uniform than that of the multi-step FP structure. As a design guideline for the FP HEMT, a simple equation describing the relationship between the FP length and the SiO2 film thickness was derived for a given drain voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) Field Plate / GaN / HEMT / Breakdown Voltage / Monte Carlo Simulation / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 251, ED2007-165, pp. 47-52, Oct. 2007.
Paper # ED2007-165 
Date of Issue 2007-10-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-165 CPM2007-91 LQE2007-66 Link to ES Tech. Rep. Archives: ED2007-165 CPM2007-91 LQE2007-66

Conference Information
Committee CPM ED LQE  
Conference Date 2007-10-11 - 2007-10-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2007-10-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs 
Sub Title (in English)  
Keyword(1) Field Plate  
Keyword(2) GaN  
Keyword(3) HEMT  
Keyword(4) Breakdown Voltage  
Keyword(5) Monte Carlo Simulation  
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1st Author's Name Ryosuke Sakai  
1st Author's Affiliation University of Fukui (Fniv. of Fukui)
2nd Author's Name Taketoshi Nishida  
2nd Author's Affiliation University of Fukui (Fniv. of Fukui)
3rd Author's Name Kenji Shiojima  
3rd Author's Affiliation University of Fukui (Fniv. of Fukui)
4th Author's Name Masaaki Kuzuhara  
4th Author's Affiliation University of Fukui (Fniv. of Fukui)
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Speaker
Date Time 2007-10-12 09:00:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2007-165,IEICE-CPM2007-91,IEICE-LQE2007-66 
Volume (vol) IEICE-107 
Number (no) no.251(ED), no.252(CPM), no.253(LQE) 
Page pp.47-52 
#Pages IEICE-6 
Date of Issue IEICE-ED-2007-10-04,IEICE-CPM-2007-10-04,IEICE-LQE-2007-10-04 


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