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Paper Abstract and Keywords
Presentation 2007-08-24 10:20
[Special Invited Talk] Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond
Masato Koyama, Masahiro Koike, Yuuichi Kamimuta, Masamichi Suzuki, Kosuke Tatsumura, Yoshinori Tsuchiya, Reika Ichihara, Masakazu Goto, Koji Nagatomo, Atsushi Azuma, Shigeru Kawanaka, Kazuaki Nakajima, Katsuyuki Sekine (Toshiba Corp.) SDM2007-159 ICD2007-87 Link to ES Tech. Rep. Archives: SDM2007-159 ICD2007-87
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, influences of metal-gate and high-k gate dielectric application on MOSFET (32nm node and beyond) characteristics are discussed, including gate-leakage current, threshold voltage and inversion carrier mobility. Current status of two alternative metal gate technologies, which are dual metal gate (gate-first) and fully silicided gate, is explained shortly.
Keyword (in Japanese) (See Japanese page) 
(in English) High-k gate dielectric / metal-gate electrode / 32 nm node / MOSFET / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 194, SDM2007-159, pp. 101-106, Aug. 2007.
Paper # SDM2007-159 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-159 ICD2007-87 Link to ES Tech. Rep. Archives: SDM2007-159 ICD2007-87

Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To SDM 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond 
Sub Title (in English)  
Keyword(1) High-k gate dielectric  
Keyword(2) metal-gate electrode  
Keyword(3) 32 nm node  
Keyword(4) MOSFET  
Keyword(5)  
Keyword(6)  
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Keyword(8)  
1st Author's Name Masato Koyama  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Masahiro Koike  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Yuuichi Kamimuta  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Masamichi Suzuki  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Kosuke Tatsumura  
5th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
6th Author's Name Yoshinori Tsuchiya  
6th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
7th Author's Name Reika Ichihara  
7th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
8th Author's Name Masakazu Goto  
8th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
9th Author's Name Koji Nagatomo  
9th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
10th Author's Name Atsushi Azuma  
10th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
11th Author's Name Shigeru Kawanaka  
11th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
12th Author's Name Kazuaki Nakajima  
12th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
13th Author's Name Katsuyuki Sekine  
13th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker Author-1 
Date Time 2007-08-24 10:20:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2007-159, ICD2007-87 
Volume (vol) vol.107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.101-106 
#Pages
Date of Issue 2007-08-16 (SDM, ICD) 


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