Paper Abstract and Keywords |
Presentation |
2007-08-24 10:20
[Special Invited Talk]
Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond Masato Koyama, Masahiro Koike, Yuuichi Kamimuta, Masamichi Suzuki, Kosuke Tatsumura, Yoshinori Tsuchiya, Reika Ichihara, Masakazu Goto, Koji Nagatomo, Atsushi Azuma, Shigeru Kawanaka, Kazuaki Nakajima, Katsuyuki Sekine (Toshiba Corp.) SDM2007-159 ICD2007-87 Link to ES Tech. Rep. Archives: SDM2007-159 ICD2007-87 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, influences of metal-gate and high-k gate dielectric application on MOSFET (32nm node and beyond) characteristics are discussed, including gate-leakage current, threshold voltage and inversion carrier mobility. Current status of two alternative metal gate technologies, which are dual metal gate (gate-first) and fully silicided gate, is explained shortly. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
High-k gate dielectric / metal-gate electrode / 32 nm node / MOSFET / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 194, SDM2007-159, pp. 101-106, Aug. 2007. |
Paper # |
SDM2007-159 |
Date of Issue |
2007-08-16 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2007-159 ICD2007-87 Link to ES Tech. Rep. Archives: SDM2007-159 ICD2007-87 |
|