IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
... (for ESS/CS/ES/ISS)
Tech. Rep. Archives
... (for ES/CS)
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2007-08-24 14:50
0.7 V SRAM Technology with Stress-Enhanced Dopant Segregated Schottky (DSS) Source/Drain Transistors for 32 nm Node
Hiroyuki Onoda, Katsura Miyashita, Takeo Nakayama, Tomoko Kinoshita, Hisashi Nishimura, Atsushi Azuma, Seiji Yamada, Fumitomo Matsuoka (Toshiba) SDM2007-165 ICD2007-93 Link to ES Tech. Rep. Archives: SDM2007-165 ICD2007-93
Abstract (in Japanese) (See Japanese page) 
(in English) For the fist time, low supply voltage SRAM operation with stress-enhanced dopant segregated Schottky (DSS) source/drain transistors is demonstrated. At constant SRAM cell current of 40 A, we achieve two orders of magnitude lower bit-line leakage than conventional technologies at Vdd=0.7 V, while in case of constant bit-line leakage of 10 nA, supply voltage is successfully reduced down by 0.1 V. DSS technology is promising for low voltage SRAM operation for 32 nm node and beyond.
Keyword (in Japanese) (See Japanese page) 
(in English) DSS / Schottky / SRAM / 32nm / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 194, SDM2007-165, pp. 131-134, Aug. 2007.
Paper # SDM2007-165 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
技術研究報告に掲載された論文の著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-165 ICD2007-93 Link to ES Tech. Rep. Archives: SDM2007-165 ICD2007-93

Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To SDM 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 0.7 V SRAM Technology with Stress-Enhanced Dopant Segregated Schottky (DSS) Source/Drain Transistors for 32 nm Node 
Sub Title (in English)  
Keyword(1) DSS  
Keyword(2) Schottky  
Keyword(3) SRAM  
Keyword(4) 32nm  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroyuki Onoda  
1st Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
2nd Author's Name Katsura Miyashita  
2nd Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
3rd Author's Name Takeo Nakayama  
3rd Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
4th Author's Name Tomoko Kinoshita  
4th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
5th Author's Name Hisashi Nishimura  
5th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
6th Author's Name Atsushi Azuma  
6th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
7th Author's Name Seiji Yamada  
7th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
8th Author's Name Fumitomo Matsuoka  
8th Author's Affiliation Semiconductor Company, Toshiba Corporation (Toshiba)
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2007-08-24 14:50:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2007-165,IEICE-ICD2007-93 
Volume (vol) IEICE-107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.131-134 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2007-08-16,IEICE-ICD-2007-08-16 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan