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| Presentation | 2007-08-24 11:10 Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI thickness of 5 nm Ken Shimizu, Toshiro Hiramoto (Univ. of Tokyo)  SDM2007-160 ICD2007-88 Link to ES Tech. Rep. Archives: SDM2007-160 ICD2007-88 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Experimental study on mobility universality in (100) oriented ultrathin body SOI nMOSFETs was performed for the first time. It is newly found that the mobility universality in ultrathin body SOI nMOSFETs is not the same as that in bulk or relatively thick SOI nMOSFETs and that $\eta$ value becomes larger as SOI thickness becomes thinner. These tendencies are well-described by the subband structure of MOS inversion layer. These results help the modeling of the mobility universality in ultrathin body SOI nMOSFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | inversion mobility / mobility universality / ultra-thin body SOI MOSFET / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 194, SDM2007-160, pp. 107-111, Aug. 2007. | |
| Paper # | SDM2007-160 | |
| Date of Issue | 2007-08-16 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-160 ICD2007-88 Link to ES Tech. Rep. Archives: SDM2007-160 ICD2007-88 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2007-08-23 - 2007-08-24 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kitami Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI thickness of 5 nm |
| Sub Title (in English) | |
| Keyword(1) | inversion mobility |
| Keyword(2) | mobility universality |
| Keyword(3) | ultra-thin body SOI MOSFET |
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| 1st Author's Name | Ken Shimizu |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Toshiro Hiramoto |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo (Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2007-08-24 11:10:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-160, ICD2007-88 |
| Volume (vol) | vol.107 |
| Number (no) | no.194(SDM), no.195(ICD) |
| Page | pp.107-111 |
| #Pages | 5 |
| Date of Issue | 2007-08-16 (SDM, ICD) |
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