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Paper Abstract and Keywords
Presentation 2007-08-24 14:15
Design Method of system LSI with FinFET type DTMOS
Yu Hiroshima, Shigeyoshi Watanabe, Keisuke Okamoto, Keisuke Koizumi (SIT) SDM2007-164 ICD2007-92 Link to ES Tech. Rep. Archives: SDM2007-164 ICD2007-92
Abstract (in Japanese) (See Japanese page) 
(in English) Planar DTMOS has a problem of increase of pattern area. Using FinFET type DTMOS excess pattern area of connect to gate and substrate can be reduced. Using FinFET type DTMOS, pattern area of system LSI designed by cell library can be reduced to 31% compared with that using planar DTMOS.
Keyword (in Japanese) (See Japanese page) 
(in English) FinFET / DTMOS / FinFET type DTMOS / system LSI / sidewall channel width / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 195, ICD2007-92, pp. 125-130, Aug. 2007.
Paper # ICD2007-92 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-164 ICD2007-92 Link to ES Tech. Rep. Archives: SDM2007-164 ICD2007-92

Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To ICD 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Design Method of system LSI with FinFET type DTMOS 
Sub Title (in English)
Keyword(1) FinFET  
Keyword(2) DTMOS  
Keyword(3) FinFET type DTMOS  
Keyword(4) system LSI  
Keyword(5) sidewall channel width  
1st Author's Name Yu Hiroshima  
1st Author's Affiliation Shonan Institute of Technology (SIT)
2nd Author's Name Shigeyoshi Watanabe  
2nd Author's Affiliation Shonan Institute of Technology (SIT)
3rd Author's Name Keisuke Okamoto  
3rd Author's Affiliation Shonan Institute of Technology (SIT)
4th Author's Name Keisuke Koizumi  
4th Author's Affiliation Shonan Institute of Technology (SIT)
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Date Time 2007-08-24 14:15:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-SDM2007-164,IEICE-ICD2007-92 
Volume (vol) IEICE-107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.125-130 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2007-08-16,IEICE-ICD-2007-08-16 

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