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Paper Abstract and Keywords
Presentation 2007-08-24 15:40
An Area-Conscious Low-Voltage-Oriented 8T-SRAM Design under DVS Environment
Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Yusuke Iguchi (Kobe Univ.), Koji Nii (Kobe Univ./Renesas Technology), Hiroshi Kawaguchi, Masahiko Yoshimoto (Kobe Univ.) SDM2007-167 ICD2007-95 Link to ES Tech. Rep. Archives: SDM2007-167 ICD2007-95
Abstract (in Japanese) (See Japanese page) 
(in English) This paper demonstrates that an 8T memory cell can be alternative design to a 6T cell in a future highly-integrated SRAM, in a 45-nm process and later with large threshold-voltage variation. The proposed voltage-control scheme that improves a write margin and read current, and the write-back scheme that stabilizes unselected cells are applied to the 8T SRAM. We verified that the low-voltage operation at 0.42 V in a 90-nm 64-Mb SRAM is possible under dynamic voltage scaling (DVS) environment.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / 6T / 8T / DVS / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 195, ICD2007-95, pp. 139-144, Aug. 2007.
Paper # ICD2007-95 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-167 ICD2007-95 Link to ES Tech. Rep. Archives: SDM2007-167 ICD2007-95

Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To ICD 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An Area-Conscious Low-Voltage-Oriented 8T-SRAM Design under DVS Environment 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) 6T  
Keyword(3) 8T  
Keyword(4) DVS  
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1st Author's Name Yasuhiro Morita  
1st Author's Affiliation Kobe University (Kobe Univ.)
2nd Author's Name Hidehiro Fujiwara  
2nd Author's Affiliation Kobe University (Kobe Univ.)
3rd Author's Name Hiroki Noguchi  
3rd Author's Affiliation Kobe University (Kobe Univ.)
4th Author's Name Yusuke Iguchi  
4th Author's Affiliation Kobe University (Kobe Univ.)
5th Author's Name Koji Nii  
5th Author's Affiliation Kobe University/Renesas Technology (Kobe Univ./Renesas Technology)
6th Author's Name Hiroshi Kawaguchi  
6th Author's Affiliation Kobe University (Kobe Univ.)
7th Author's Name Masahiko Yoshimoto  
7th Author's Affiliation Kobe University (Kobe Univ.)
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Speaker
Date Time 2007-08-24 15:40:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-SDM2007-167,IEICE-ICD2007-95 
Volume (vol) IEICE-107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.139-144 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2007-08-16,IEICE-ICD-2007-08-16 


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