IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
... (for ESS/CS/ES/ISS)
Tech. Rep. Archives
... (for ES/CS)
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2007-08-23 15:25
A 1.92us-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors
Kazuki Fukuoka, Osamu Ozawa, Ryo Mori, Yasuto Igarashi, Toshio Sasaki, Takashi Kuraishi, Yoshihiko Yasu, Koichiro Ishibashi (Renesas Technology) SDM2007-153 ICD2007-81 Link to ES Tech. Rep. Archives: SDM2007-153 ICD2007-81
Abstract (in Japanese) (See Japanese page) 
(in English) A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing the variation of rush current on PVT allows shorter wake-up times, which can reduce leakage currents in a mobile processor. Wake-up takes 1.92us and leakage current is reduced by 96.9% in an application CPU domain. Probing the rush current indicated accurate control by the technique.
Keyword (in Japanese) (See Japanese page) 
(in English) thick-gate-oxide power switch / fast wake-up / leakage current reduction / rush current / PVT variation / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 195, ICD2007-81, pp. 69-73, Aug. 2007.
Paper # ICD2007-81 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
技術研究報告に掲載された論文の著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-153 ICD2007-81 Link to ES Tech. Rep. Archives: SDM2007-153 ICD2007-81

Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To ICD 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 1.92us-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors 
Sub Title (in English)  
Keyword(1) thick-gate-oxide power switch  
Keyword(2) fast wake-up  
Keyword(3) leakage current reduction  
Keyword(4) rush current  
Keyword(5) PVT variation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kazuki Fukuoka  
1st Author's Affiliation Renesas Technology Corp. (Renesas Technology)
2nd Author's Name Osamu Ozawa  
2nd Author's Affiliation Renesas Technology Corp. (Renesas Technology)
3rd Author's Name Ryo Mori  
3rd Author's Affiliation Renesas Technology Corp. (Renesas Technology)
4th Author's Name Yasuto Igarashi  
4th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
5th Author's Name Toshio Sasaki  
5th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
6th Author's Name Takashi Kuraishi  
6th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
7th Author's Name Yoshihiko Yasu  
7th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
8th Author's Name Koichiro Ishibashi  
8th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2007-08-23 15:25:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-SDM2007-153,IEICE-ICD2007-81 
Volume (vol) IEICE-107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.69-73 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2007-08-16,IEICE-ICD-2007-08-16 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan