Paper Abstract and Keywords |
Presentation |
2007-08-09 15:45
Vertically Aligned CNT Growth on Sectional Plane of Catalytic Thin Film Using DC Plasma-Enhanced CVD Hiroki Okuyama, Takuya Sonomura, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.) CPM2007-41 Link to ES Tech. Rep. Archives: CPM2007-41 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Position and/or direction controlling of CNTs is a necessary process technology to prepare nanoscaled CNT electronic devices, such as scanning probe microscopy tips or electronic measuring nanoprobes. We want to demonstrate a new position-controlling method for vertically aligned CNT (VACNT) growth on edges of catalytic thin films. A Mo film was deposited on a Ni catalyst thin film to prevent CNT growth from surfaces. The bi-layered films were partially shaved using a diamond cutter, FIB, and lift-off method to obtain fresh Ni sectional planes. CNTs were grown using a DC plasma-enhanced CVD method.
From SEM and TEM images it was confirmed that multiwalled VACNTs with ca. 25 nm diameter grew vertically to substrate surfaces. The VACNT growth took place from only sectional planes of the catalytic Ni film. The sectional plane with few tens nm thickness acted as an effective nano-catalyst. Conclusively the VACNTs can be grown selectively on sectional planes of catalytic thin films. The technique newly developed in this work will be applied to prepare various CNT nano-devices. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Vertically aligned CNT / Plasma-enhanced CVD / Sectional plane / Catalytic thin film / Growth control / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 178, CPM2007-41, pp. 27-32, Aug. 2007. |
Paper # |
CPM2007-41 |
Date of Issue |
2007-08-02 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
CPM2007-41 Link to ES Tech. Rep. Archives: CPM2007-41 |
Conference Information |
Committee |
CPM |
Conference Date |
2007-08-09 - 2007-08-10 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Yamagata Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Electronic Component Parts and Materials, etc. |
Paper Information |
Registration To |
CPM |
Conference Code |
2007-08-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Vertically Aligned CNT Growth on Sectional Plane of Catalytic Thin Film Using DC Plasma-Enhanced CVD |
Sub Title (in English) |
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Keyword(1) |
Vertically aligned CNT |
Keyword(2) |
Plasma-enhanced CVD |
Keyword(3) |
Sectional plane |
Keyword(4) |
Catalytic thin film |
Keyword(5) |
Growth control |
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1st Author's Name |
Hiroki Okuyama |
1st Author's Affiliation |
Nihon University (Nihon Univ.) |
2nd Author's Name |
Takuya Sonomura |
2nd Author's Affiliation |
Nihon University (Nihon Univ.) |
3rd Author's Name |
Nobuyuki Iwata |
3rd Author's Affiliation |
Nihon University (Nihon Univ.) |
4th Author's Name |
Hiroshi Yamamoto |
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Nihon University (Nihon Univ.) |
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Speaker |
Author-4 |
Date Time |
2007-08-09 15:45:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2007-41 |
Volume (vol) |
vol.107 |
Number (no) |
no.178 |
Page |
pp.27-32 |
#Pages |
6 |
Date of Issue |
2007-08-02 (CPM) |