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Paper Abstract and Keywords
Presentation 2007-08-09 15:45
Vertically Aligned CNT Growth on Sectional Plane of Catalytic Thin Film Using DC Plasma-Enhanced CVD
Hiroki Okuyama, Takuya Sonomura, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.) CPM2007-41 Link to ES Tech. Rep. Archives: CPM2007-41
Abstract (in Japanese) (See Japanese page) 
(in English) Position and/or direction controlling of CNTs is a necessary process technology to prepare nanoscaled CNT electronic devices, such as scanning probe microscopy tips or electronic measuring nanoprobes. We want to demonstrate a new position-controlling method for vertically aligned CNT (VACNT) growth on edges of catalytic thin films. A Mo film was deposited on a Ni catalyst thin film to prevent CNT growth from surfaces. The bi-layered films were partially shaved using a diamond cutter, FIB, and lift-off method to obtain fresh Ni sectional planes. CNTs were grown using a DC plasma-enhanced CVD method.
From SEM and TEM images it was confirmed that multiwalled VACNTs with ca. 25 nm diameter grew vertically to substrate surfaces. The VACNT growth took place from only sectional planes of the catalytic Ni film. The sectional plane with few tens nm thickness acted as an effective nano-catalyst. Conclusively the VACNTs can be grown selectively on sectional planes of catalytic thin films. The technique newly developed in this work will be applied to prepare various CNT nano-devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Vertically aligned CNT / Plasma-enhanced CVD / Sectional plane / Catalytic thin film / Growth control / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 178, CPM2007-41, pp. 27-32, Aug. 2007.
Paper # CPM2007-41 
Date of Issue 2007-08-02 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF CPM2007-41 Link to ES Tech. Rep. Archives: CPM2007-41

Conference Information
Committee CPM  
Conference Date 2007-08-09 - 2007-08-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Yamagata Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Electronic Component Parts and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2007-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Vertically Aligned CNT Growth on Sectional Plane of Catalytic Thin Film Using DC Plasma-Enhanced CVD 
Sub Title (in English)  
Keyword(1) Vertically aligned CNT  
Keyword(2) Plasma-enhanced CVD  
Keyword(3) Sectional plane  
Keyword(4) Catalytic thin film  
Keyword(5) Growth control  
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1st Author's Name Hiroki Okuyama  
1st Author's Affiliation Nihon University (Nihon Univ.)
2nd Author's Name Takuya Sonomura  
2nd Author's Affiliation Nihon University (Nihon Univ.)
3rd Author's Name Nobuyuki Iwata  
3rd Author's Affiliation Nihon University (Nihon Univ.)
4th Author's Name Hiroshi Yamamoto  
4th Author's Affiliation Nihon University (Nihon Univ.)
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Speaker Author-4 
Date Time 2007-08-09 15:45:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2007-41 
Volume (vol) vol.107 
Number (no) no.178 
Page pp.27-32 
#Pages
Date of Issue 2007-08-02 (CPM) 


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