Paper Abstract and Keywords |
Presentation |
2007-06-25 13:00
[Invited Talk]
Room-temperature-operating single-electron devices using silicon nanowire MOSFET Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, we report the development of devices for single-electron transfer and detection at room temperature, using silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). Single electrons are transferred to a storage node (SN) by modulating the potential barrier in the channel of the MOSFETs. Another MOSFET, located close to the SN, detects electrons transferred into the SN with single-electron resolution. These transfer and detection functions were applied to a digital-to-analog converter, gain-cell memory, and infrared sensor. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
silicon / single-electron device / MOSFET / single-electron transfer / single-electron detection / data information circuit / sensor / |
Reference Info. |
IEICE Tech. Rep. |
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Conference Information |
Committee |
ED SDM |
Conference Date |
2007-06-25 - 2007-06-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2007 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) |
Paper Information |
Registration To |
SDM |
Conference Code |
2007-06-ED-SDM |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Room-temperature-operating single-electron devices using silicon nanowire MOSFET |
Sub Title (in English) |
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Keyword(1) |
silicon |
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single-electron device |
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MOSFET |
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single-electron transfer |
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single-electron detection |
Keyword(6) |
data information circuit |
Keyword(7) |
sensor |
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1st Author's Name |
Katsuhiko Nishiguchi |
1st Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
2nd Author's Name |
Yukinori Ono |
2nd Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
3rd Author's Name |
Akira Fujiwara |
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NTT Basic Research Laboratories (NTT) |
4th Author's Name |
Hiroshi Inokawa |
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Shizuoka University (Shizuoka Univ.) |
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Yasuo Takahashi |
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Hokkaido University (Hokkaido Univ.) |
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Author-1 |
Date Time |
2007-06-25 13:00:00 |
Presentation Time |
minutes |
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SDM |
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