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Paper Abstract and Keywords
Presentation 2007-06-25 13:00
[Invited Talk] Room-temperature-operating single-electron devices using silicon nanowire MOSFET
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we report the development of devices for single-electron transfer and detection at room temperature, using silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). Single electrons are transferred to a storage node (SN) by modulating the potential barrier in the channel of the MOSFETs. Another MOSFET, located close to the SN, detects electrons transferred into the SN with single-electron resolution. These transfer and detection functions were applied to a digital-to-analog converter, gain-cell memory, and infrared sensor.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon / single-electron device / MOSFET / single-electron transfer / single-electron detection / data information circuit / sensor /  
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Conference Information
Committee ED SDM  
Conference Date 2007-06-25 - 2007-06-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Commodore Hotel Gyeongju Chosun, Gyeongju, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2007 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) 
Paper Information
Registration To SDM 
Conference Code 2007-06-ED-SDM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Room-temperature-operating single-electron devices using silicon nanowire MOSFET 
Sub Title (in English)  
Keyword(1) silicon  
Keyword(2) single-electron device  
Keyword(3) MOSFET  
Keyword(4) single-electron transfer  
Keyword(5) single-electron detection  
Keyword(6) data information circuit  
Keyword(7) sensor  
Keyword(8)  
1st Author's Name Katsuhiko Nishiguchi  
1st Author's Affiliation NTT Basic Research Laboratories (NTT)
2nd Author's Name Yukinori Ono  
2nd Author's Affiliation NTT Basic Research Laboratories (NTT)
3rd Author's Name Akira Fujiwara  
3rd Author's Affiliation NTT Basic Research Laboratories (NTT)
4th Author's Name Hiroshi Inokawa  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Yasuo Takahashi  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2007-06-25 13:00:00 
Presentation Time minutes 
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