In this paper, we report the development of devices for single-electron transfer and detection at room temperature, using silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). Single electrons are transferred to a storage node (SN) by modulating the potential barrier in the channel of the MOSFETs. Another MOSFET, located close to the SN, detects electrons transferred into the SN with single-electron resolution. These transfer and detection functions were applied to a digital-to-analog converter, gain-cell memory, and infrared sensor.