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Paper Abstract and Keywords
Presentation 2007-06-25 13:00
[Invited Talk] High-performance and reliable InP/InGaAs HBTs operating at high current density
Shoji Yamahata, Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai (NTT), Yasuyuki Miyamoto (TOKYO TECH)
Abstract (in Japanese) (See Japanese page) 
(in English) This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure and a refractory tungsten (W)-based emitter contact metal. The ledge structure is effective in suppressing surface recombination currents at the emitter-mesa periphery, and the W emitter contact metal is advantageous for prevention of emitter electrode metal migration. We compare the dc and high-frequency characteristics of four InP/InGaAs HBTs with different n-doping levels in the InP emitter layer (nE) for the purpose of optimizing the emitter design both for performance and reliability. The InP-HBT with relatively high nE shows a reasonable current gain of 50 and an excellent unity gain cutoff frequency (ft) of 270 GHz. Additionally, accelerated life tests for this InP-HBT reveal no rapid decrease in current gain up to 100 hours in spite of a collector current density (JC) as high as 5mA/um2 at the ambient temperature of 195℃.
Keyword (in Japanese) (See Japanese page) 
(in English) HBT / InP/InGaAs / InP / InGaAs / reliability / passivation / ledge / tungsten  
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Conference Information
Committee ED SDM  
Conference Date 2007-06-25 - 2007-06-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Commodore Hotel Gyeongju Chosun, Gyeongju, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2007 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2007) 
Paper Information
Registration To ED 
Conference Code 2007-06-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-performance and reliable InP/InGaAs HBTs operating at high current density 
Sub Title (in English)  
Keyword(1) HBT  
Keyword(2) InP/InGaAs  
Keyword(3) InP  
Keyword(4) InGaAs  
Keyword(5) reliability  
Keyword(6) passivation  
Keyword(7) ledge  
Keyword(8) tungsten  
1st Author's Name Shoji Yamahata  
1st Author's Affiliation NTT Corporation (NTT)
2nd Author's Name Norihide Kashio  
2nd Author's Affiliation NTT Corporation (NTT)
3rd Author's Name Kenji Kurishima  
3rd Author's Affiliation NTT Corporation (NTT)
4th Author's Name Yoshino K. Fukai  
4th Author's Affiliation NTT Corporation (NTT)
5th Author's Name Yasuyuki Miyamoto  
5th Author's Affiliation Tokyo Institute of Technology (TOKYO TECH)
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Speaker Author-1 
Date Time 2007-06-25 13:00:00 
Presentation Time minutes 
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