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Paper Abstract and Keywords
Presentation 2007-06-16 10:10
Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-42 Link to ES Tech. Rep. Archives: ED2007-42
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports the feasibility of oxidation on n-GaN surface using photoelectrochemical process in a mixed solution with glycol solution. The sample was immersed into the mixed solution with tartaric acid and propylene glycol. Then, bias voltage was applied on the surface under UV illumination. The XPS measurement revealed the surface was oxidized to form the gallium oxide. The quality of the surface and layer varied according to the conditions such as processing time and bias voltage. When the combination of the ramp and constant bias form was used as applied voltage, the photoluminescence on the processed surface presented the 3-times increase in intensity.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / anodic oxidation / photoelectrochemical / gallium oxide / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-42, pp. 61-65, June 2007.
Paper # ED2007-42 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-42 Link to ES Tech. Rep. Archives: ED2007-42

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Anodic oxidation on n-GaN surface using photoelectrochemical process 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) anodic oxidation  
Keyword(3) photoelectrochemical  
Keyword(4) gallium oxide  
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1st Author's Name Nanako Shiozaki  
1st Author's Affiliation Graduate School of Information Science and Technology, Research Center for Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tamotsu Hashizume  
2nd Author's Affiliation Graduate School of Information Science and Technology, Research Center for Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2007-06-16 10:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-42 
Volume (vol) vol.107 
Number (no) no.95 
Page pp.61-65 
#Pages
Date of Issue 2007-06-08 (ED) 


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