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| Presentation | 2007-06-16 09:30 [Invited Talk] Current transport mechanism of metal/p-GaN contacts Kenji Shiojima (Fukui Univ.)  ED2007-41 Link to ES Tech. Rep. Archives: ED2007-41 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper will review the basic understanding of current transport mechanism of metal/p-GaN contacts. We have demonstrated that low Mg doping is affective to improve leaky Schottky characteristics, and provided Schottky barrier height as high as 2.4 eV for Ni/p-GaN contacts. In the I-V and C-V characteristics, a significantly large memory effect was observed, which was caused by carrier capture and emission of deep-level defects. High-temperature ICTS measurements revealed that the deep-level defects were in the mid-gap level, and located in the vicinity of the interface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | p-GaN / Schottky contact / Low-Mg doping / deep-level defects / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 95, ED2007-41, pp. 57-60, June 2007. | |
| Paper # | ED2007-41 | |
| Date of Issue | 2007-06-08 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-41 Link to ES Tech. Rep. Archives: ED2007-41 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2007-06-15 - 2007-06-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Toyama Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor Process, Device, etc |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2007-06-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Current transport mechanism of metal/p-GaN contacts |
| Sub Title (in English) | |
| Keyword(1) | p-GaN |
| Keyword(2) | Schottky contact |
| Keyword(3) | Low-Mg doping |
| Keyword(4) | deep-level defects |
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| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | Fukui University (Fukui Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-06-16 09:30:00 |
| Presentation Time | 40 minutes |
| Registration for | ED |
| Paper # | ED2007-41 |
| Volume (vol) | vol.107 |
| Number (no) | no.95 |
| Page | pp.57-60 |
| #Pages | 4 |
| Date of Issue | 2007-06-08 (ED) |
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