Paper Abstract and Keywords |
Presentation |
2007-06-16 11:00
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) ED2007-44 Link to ES Tech. Rep. Archives: ED2007-44 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We were demonstrated the realization of compatibility of extremely low gate leakage current and low source resistance with Si ion-implanted GaN/AlGaN/GaN surface-stabilized high-electron mobility transistor (HEMT) without any recess etching process. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain regions with energy of 80 keV, the performances were significantly improved. On-resistance reduced from 26.2 to 4.2 Ω•mm. Saturation drain current and maximum transconductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN/AlGaN/GaN / Ion Implantation / HEMT / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 95, ED2007-44, pp. 71-74, June 2007. |
Paper # |
ED2007-44 |
Date of Issue |
2007-06-08 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2007-44 Link to ES Tech. Rep. Archives: ED2007-44 |
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