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Paper Abstract and Keywords
Presentation 2007-06-15 16:15
MOVPE growth of high-quality InP-based resonant tunneling diodes
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) ED2007-38 Link to ES Tech. Rep. Archives: ED2007-38
Abstract (in Japanese) (See Japanese page) 
(in English) InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organic vapor-phase epitaxy (MOVPE). Cross-sectional transmission electron microscopy (TEM) confirmed the successful formation of ultra-thin strained AlAs barriers and In0.8Ga0.2As wells. Atomic force microscope (AFM) observation revealed atomically flat interfaces in the double-barrier (DB) structures of the RTDs. We obtained a peak current density (jP) of 1.46x105 A/cm2, high peak-to-valley current ratio (PVR) of 7.7, and a low peak voltage (VP) of 0.43 V simultaneously by using a R&D-type reactor. Maximum jP exceeded 4x105 A/cm2. The AlAs barrier thickness was precisely controlled by the Al-precursor-supply duration. The excellent RTD characteristics were also obtained from the RTDs grown by using a mass-production-type reactor.
Keyword (in Japanese) (See Japanese page) 
(in English) RTD / MOVPE / InP / InGaAs / AlAs / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-38, pp. 39-43, June 2007.
Paper # ED2007-38 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-38 Link to ES Tech. Rep. Archives: ED2007-38

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MOVPE growth of high-quality InP-based resonant tunneling diodes 
Sub Title (in English)  
Keyword(1) RTD  
Keyword(2) MOVPE  
Keyword(3) InP  
Keyword(4) InGaAs  
Keyword(5) AlAs  
1st Author's Name Hiroki Sugiyama  
1st Author's Affiliation NTT Photonics Laboratories (NTT)
2nd Author's Name Hideaki Matsuzaki  
2nd Author's Affiliation NTT Photonics Laboratories (NTT)
3rd Author's Name Yasuhiro Oda  
3rd Author's Affiliation NTT Photonics Laboratories (NTT)
4th Author's Name Haruki Yokoyama  
4th Author's Affiliation NTT Photonics Laboratories (NTT)
5th Author's Name Takatomo Enoki  
5th Author's Affiliation NTT Photonics Laboratories (NTT)
6th Author's Name Takashi Kobayashi  
6th Author's Affiliation NTT Photonics Laboratories (NTT)
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Date Time 2007-06-15 16:15:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2007-38 
Volume (vol) IEICE-107 
Number (no) no.95 
Page pp.39-43 
#Pages IEICE-5 
Date of Issue IEICE-ED-2007-06-08 

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