Paper Abstract and Keywords |
Presentation |
2007-06-15 16:15
MOVPE growth of high-quality InP-based resonant tunneling diodes Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) ED2007-38 Link to ES Tech. Rep. Archives: ED2007-38 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organic vapor-phase epitaxy (MOVPE). Cross-sectional transmission electron microscopy (TEM) confirmed the successful formation of ultra-thin strained AlAs barriers and In0.8Ga0.2As wells. Atomic force microscope (AFM) observation revealed atomically flat interfaces in the double-barrier (DB) structures of the RTDs. We obtained a peak current density (jP) of 1.46x105 A/cm2, high peak-to-valley current ratio (PVR) of 7.7, and a low peak voltage (VP) of 0.43 V simultaneously by using a R&D-type reactor. Maximum jP exceeded 4x105 A/cm2. The AlAs barrier thickness was precisely controlled by the Al-precursor-supply duration. The excellent RTD characteristics were also obtained from the RTDs grown by using a mass-production-type reactor. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
RTD / MOVPE / InP / InGaAs / AlAs / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 95, ED2007-38, pp. 39-43, June 2007. |
Paper # |
ED2007-38 |
Date of Issue |
2007-06-08 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-38 Link to ES Tech. Rep. Archives: ED2007-38 |
Conference Information |
Committee |
ED |
Conference Date |
2007-06-15 - 2007-06-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Toyama Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor Process, Device, etc |
Paper Information |
Registration To |
ED |
Conference Code |
2007-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
MOVPE growth of high-quality InP-based resonant tunneling diodes |
Sub Title (in English) |
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Keyword(1) |
RTD |
Keyword(2) |
MOVPE |
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InP |
Keyword(4) |
InGaAs |
Keyword(5) |
AlAs |
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1st Author's Name |
Hiroki Sugiyama |
1st Author's Affiliation |
NTT Photonics Laboratories (NTT) |
2nd Author's Name |
Hideaki Matsuzaki |
2nd Author's Affiliation |
NTT Photonics Laboratories (NTT) |
3rd Author's Name |
Yasuhiro Oda |
3rd Author's Affiliation |
NTT Photonics Laboratories (NTT) |
4th Author's Name |
Haruki Yokoyama |
4th Author's Affiliation |
NTT Photonics Laboratories (NTT) |
5th Author's Name |
Takatomo Enoki |
5th Author's Affiliation |
NTT Photonics Laboratories (NTT) |
6th Author's Name |
Takashi Kobayashi |
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NTT Photonics Laboratories (NTT) |
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Speaker |
Author-1 |
Date Time |
2007-06-15 16:15:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-38 |
Volume (vol) |
vol.107 |
Number (no) |
no.95 |
Page |
pp.39-43 |
#Pages |
5 |
Date of Issue |
2007-06-08 (ED) |
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