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Paper Abstract and Keywords
Presentation 2007-06-15 14:50
Growth of Insb films on Si(111) surface by 2-step growth
Kazunori Murata, Norsuryati Binti Ahmad, Yu Tamura, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ of Toyama) ED2007-35 Link to ES Tech. Rep. Archives: ED2007-35
Abstract (in Japanese) (See Japanese page) 
(in English) Heteroepitaxial growth of InSb films on a Si(1 1 1) surface was carried out in an ultra-high vacuum (UHV) chamber at growth temperature range 200-420 oC. The grown InSb films were characterized by using X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall measurement. The preferentially (111)-oriented InSb films were grown for the temperature range of 200 oC and 300 oC, and the InSb films with smooth surfae at the temperature rang of 220-240 oC. The grown InSb films consisted of two kinds of domains for temperature range of 200-300 oC. The in-plane structure of the InSb film was improved using 2-step growth. The electron mobility of InSb film was about 140000 cm2/Vs.
Keyword (in Japanese) (See Japanese page) 
(in English) x-ray diffraction / atomic force microscope / InSb / 2step-growth / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-35, pp. 21-25, June 2007.
Paper # ED2007-35 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-35 Link to ES Tech. Rep. Archives: ED2007-35

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of Insb films on Si(111) surface by 2-step growth 
Sub Title (in English)  
Keyword(1) x-ray diffraction  
Keyword(2) atomic force microscope  
Keyword(3) InSb  
Keyword(4) 2step-growth  
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1st Author's Name Kazunori Murata  
1st Author's Affiliation University of Toyama (Univ of Toyama)
2nd Author's Name Norsuryati Binti Ahmad  
2nd Author's Affiliation University of Toyama (Univ of Toyama)
3rd Author's Name Yu Tamura  
3rd Author's Affiliation University of Toyama (Univ of Toyama)
4th Author's Name Masayuki Mori  
4th Author's Affiliation University of Toyama (Univ of Toyama)
5th Author's Name Toyokazu Tambo  
5th Author's Affiliation University of Toyama (Univ of Toyama)
6th Author's Name Koichi Maezawa  
6th Author's Affiliation University of Toyama (Univ of Toyama)
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Speaker Author-1 
Date Time 2007-06-15 14:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-35 
Volume (vol) vol.107 
Number (no) no.95 
Page pp.21-25 
#Pages
Date of Issue 2007-06-08 (ED) 


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