Paper Abstract and Keywords |
Presentation |
2007-06-15 14:50
Growth of Insb films on Si(111) surface by 2-step growth Kazunori Murata, Norsuryati Binti Ahmad, Yu Tamura, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ of Toyama) ED2007-35 Link to ES Tech. Rep. Archives: ED2007-35 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Heteroepitaxial growth of InSb films on a Si(1 1 1) surface was carried out in an ultra-high vacuum (UHV) chamber at growth temperature range 200-420 oC. The grown InSb films were characterized by using X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall measurement. The preferentially (111)-oriented InSb films were grown for the temperature range of 200 oC and 300 oC, and the InSb films with smooth surfae at the temperature rang of 220-240 oC. The grown InSb films consisted of two kinds of domains for temperature range of 200-300 oC. The in-plane structure of the InSb film was improved using 2-step growth. The electron mobility of InSb film was about 140000 cm2/Vs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
x-ray diffraction / atomic force microscope / InSb / 2step-growth / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 95, ED2007-35, pp. 21-25, June 2007. |
Paper # |
ED2007-35 |
Date of Issue |
2007-06-08 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-35 Link to ES Tech. Rep. Archives: ED2007-35 |
Conference Information |
Committee |
ED |
Conference Date |
2007-06-15 - 2007-06-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Toyama Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor Process, Device, etc |
Paper Information |
Registration To |
ED |
Conference Code |
2007-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Growth of Insb films on Si(111) surface by 2-step growth |
Sub Title (in English) |
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Keyword(1) |
x-ray diffraction |
Keyword(2) |
atomic force microscope |
Keyword(3) |
InSb |
Keyword(4) |
2step-growth |
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1st Author's Name |
Kazunori Murata |
1st Author's Affiliation |
University of Toyama (Univ of Toyama) |
2nd Author's Name |
Norsuryati Binti Ahmad |
2nd Author's Affiliation |
University of Toyama (Univ of Toyama) |
3rd Author's Name |
Yu Tamura |
3rd Author's Affiliation |
University of Toyama (Univ of Toyama) |
4th Author's Name |
Masayuki Mori |
4th Author's Affiliation |
University of Toyama (Univ of Toyama) |
5th Author's Name |
Toyokazu Tambo |
5th Author's Affiliation |
University of Toyama (Univ of Toyama) |
6th Author's Name |
Koichi Maezawa |
6th Author's Affiliation |
University of Toyama (Univ of Toyama) |
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Speaker |
Author-1 |
Date Time |
2007-06-15 14:50:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-35 |
Volume (vol) |
vol.107 |
Number (no) |
no.95 |
Page |
pp.21-25 |
#Pages |
5 |
Date of Issue |
2007-06-08 (ED) |
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