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| Presentation | 2007-06-08 11:20 Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.)  SDM2007-44 Link to ES Tech. Rep. Archives: SDM2007-44 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is increase in EOT by high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The increase in EOT observed for the TaN/LaON and W/LaON structure is reduced compared with that observed for the W/La2O3 structure. This must be caused by nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after annealing at high temperature. nMOSFET consisting of W/LaON/Si is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | lanthanum oxide / nitrogen radicals / X-ray Photoelectron Spectroscopy / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-44, pp. 71-74, June 2007. | |
| Paper # | SDM2007-44 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-44 Link to ES Tech. Rep. Archives: SDM2007-44 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals |
| Sub Title (in English) | * |
| Keyword(1) | lanthanum oxide |
| Keyword(2) | nitrogen radicals |
| Keyword(3) | X-ray Photoelectron Spectroscopy |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Soshi Sato |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 2nd Author's Name | Kiichi Tachi |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 3rd Author's Name | Jaeyeol Song |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 4th Author's Name | Kuniyuki Kakushima |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 5th Author's Name | Parhat Ahmet |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 6th Author's Name | Kazuo Tsutsui |
| 6th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 7th Author's Name | Nobuyuki Sugii |
| 7th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 8th Author's Name | Takeo Hattori |
| 8th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 9th Author's Name | Hiroshi Iwai |
| 9th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
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| Speaker | Author-1 |
| Date Time | 2007-06-08 11:20:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-44 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.71-74 |
| #Pages | 4 |
| Date of Issue | 2007-05-31 (SDM) |
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