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| Presentation | 2007-06-08 13:35 Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices Koji Kita, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi (Univ.of Tokyo)  SDM2007-47 Link to ES Tech. Rep. Archives: SDM2007-47 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The impact of high-k material selection on the electrical characteristics of high-k/Ge MIS capacitors was investigated. The Y2O3/Ge maintained good electrical characteristics even after annealing at 600oC, while HfO2/Ge seriously deteriorated. The critical difference between HfO2/Ge and Y2O3/Ge systems was observed from the crystallinity change by the reaction with Ge. The Y2O3 film was amorphized at the interface by forming Y-germanate, which would work as a good interfacial layer to maintain MIS characteristics up to 600oC, while HfO2 films lost the amorphous GeOx interfacial layer by annealing. The High-k material for Ge devices should have a moderate reactivity with Ge and a tendency to be amorphous by Ge-doping. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | High-k dielectric / Germanium / Electrical characteristics / MIS capacitor / Interface reaction / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-47, pp. 85-90, June 2007. | |
| Paper # | SDM2007-47 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-47 Link to ES Tech. Rep. Archives: SDM2007-47 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices |
| Sub Title (in English) | |
| Keyword(1) | High-k dielectric |
| Keyword(2) | Germanium |
| Keyword(3) | Electrical characteristics |
| Keyword(4) | MIS capacitor |
| Keyword(5) | Interface reaction |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koji Kita |
| 1st Author's Affiliation | The University of Tokyo (Univ.of Tokyo) |
| 2nd Author's Name | Hideyuki Nomura |
| 2nd Author's Affiliation | The University of Tokyo (Univ.of Tokyo) |
| 3rd Author's Name | Sho Suzuki |
| 3rd Author's Affiliation | The University of Tokyo (Univ.of Tokyo) |
| 4th Author's Name | Toshitake Takahashi |
| 4th Author's Affiliation | The University of Tokyo (Univ.of Tokyo) |
| 5th Author's Name | Tomonori Nishimura |
| 5th Author's Affiliation | The University of Tokyo (Univ.of Tokyo) |
| 6th Author's Name | Akira Toriumi |
| 6th Author's Affiliation | The University of Tokyo (Univ.of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2007-06-08 13:35:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-47 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.85-90 |
| #Pages | 6 |
| Date of Issue | 2007-05-31 (SDM) |
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