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| Presentation | 2007-06-08 13:10 Electrical Properties of Al2O3 Thin Films Prepared by RF Magnetron Sputtering Method Yutaka Nishioka, Shin Kikuchi, Isao Kimura, Takehito Jimbo, Koukou Suu (ULVAC)  SDM2007-46 Link to ES Tech. Rep. Archives: SDM2007-46 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We prepared the LaAlO3 thin films by RF magnetron sputtering on 8ich p-Si(100) substrate for High-k gate insulator. After post deposition annealing, Pt top electrode deposited on the LaAlO3 thin film by mask through sputtering. The thickness of LaAlO3 is 24.2nm measured by Ellipsometor. EOT, k-value and Break down field of Pt/LaAlO3/Si-MIS capacitor are 5.4nm, 17.4 and 16.67MV/cm, respectively. These values of LaAlO3 were very excellent compared with that of SiO2 and Al2O3. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | LaAlO3 / High-k gate / Sputtering / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-46, pp. 81-83, June 2007. | |
| Paper # | SDM2007-46 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-46 Link to ES Tech. Rep. Archives: SDM2007-46 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Al2O3 Thin Films Prepared by RF Magnetron Sputtering Method |
| Sub Title (in English) | |
| Keyword(1) | LaAlO3 |
| Keyword(2) | High-k gate |
| Keyword(3) | Sputtering |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yutaka Nishioka |
| 1st Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. (ULVAC) |
| 2nd Author's Name | Shin Kikuchi |
| 2nd Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. (ULVAC) |
| 3rd Author's Name | Isao Kimura |
| 3rd Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. (ULVAC) |
| 4th Author's Name | Takehito Jimbo |
| 4th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. (ULVAC) |
| 5th Author's Name | Koukou Suu |
| 5th Author's Affiliation | Institute for Semiconductor Technologies, ULVAC, Inc. (ULVAC) |
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| Speaker | Author-1 |
| Date Time | 2007-06-08 13:10:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-46 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.81-83 |
| #Pages | 3 |
| Date of Issue | 2007-05-31 (SDM) |
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