Paper Abstract and Keywords |
Presentation |
2007-06-08 09:50
Modeling of NBTI Degradation for SiON pMOSFET Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41 Link to ES Tech. Rep. Archives: SDM2007-41 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the Ogawa model for hole trap generation is known experimentally.However, there is not a good model of NBTI degradation for SiON devices.
In this paper, we propose a nitrogen dependent hole trap generation model by extending these two models and present the NBTI degradation model for SiON pMOSFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
NBTI / reliability / insulator / reaction-diffusion model / nitrogen addition / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 85, SDM2007-41, pp. 55-58, June 2007. |
Paper # |
SDM2007-41 |
Date of Issue |
2007-05-31 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2007-41 Link to ES Tech. Rep. Archives: SDM2007-41 |
Conference Information |
Committee |
SDM |
Conference Date |
2007-06-07 - 2007-06-08 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hiroshima Univ. ( Faculty Club) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Sci. & Technol. for Thin Dielectrics for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2007-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Modeling of NBTI Degradation for SiON pMOSFET |
Sub Title (in English) |
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Keyword(1) |
NBTI |
Keyword(2) |
reliability |
Keyword(3) |
insulator |
Keyword(4) |
reaction-diffusion model |
Keyword(5) |
nitrogen addition |
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1st Author's Name |
Junji Shimokawa |
1st Author's Affiliation |
Toshiba Corporation (Toshiba) |
2nd Author's Name |
Toshiyuki Enda |
2nd Author's Affiliation |
Toshiba Corporation (Toshiba) |
3rd Author's Name |
Nobutoshi Aoki |
3rd Author's Affiliation |
Toshiba Corporation (Toshiba) |
4th Author's Name |
Hiroyoshi Tanimoto |
4th Author's Affiliation |
Toshiba Corporation (Toshiba) |
5th Author's Name |
Sanae Ito |
5th Author's Affiliation |
Toshiba Corporation (Toshiba) |
6th Author's Name |
Yoshiaki Toyoshima |
6th Author's Affiliation |
Toshiba Corporation (Toshiba) |
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Speaker |
Author-1 |
Date Time |
2007-06-08 09:50:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2007-41 |
Volume (vol) |
vol.107 |
Number (no) |
no.85 |
Page |
pp.55-58 |
#Pages |
4 |
Date of Issue |
2007-05-31 (SDM) |