Paper Abstract and Keywords |
Presentation |
2007-06-08 10:30
The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42 Link to ES Tech. Rep. Archives: SDM2007-42 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (in -dVth=At^B) for HfSiON is independent on measurement temperature, while the slope for HfSiOx is. It was indicated that the nitridation could affect the mechanism of the threshold voltage shift. We consider that the threshold voltage shift is always related to the oxygen vacancy, which plays several roles, and the influence of each role is varied by nitridation and temperature. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
HfSiOx / HfSiON / Nitrogen concentration / NBTI / Oxygen vacancy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 85, SDM2007-42, pp. 59-64, June 2007. |
Paper # |
SDM2007-42 |
Date of Issue |
2007-05-31 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2007-42 Link to ES Tech. Rep. Archives: SDM2007-42 |
Conference Information |
Committee |
SDM |
Conference Date |
2007-06-07 - 2007-06-08 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hiroshima Univ. ( Faculty Club) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Sci. & Technol. for Thin Dielectrics for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2007-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift |
Sub Title (in English) |
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Keyword(1) |
HfSiOx |
Keyword(2) |
HfSiON |
Keyword(3) |
Nitrogen concentration |
Keyword(4) |
NBTI |
Keyword(5) |
Oxygen vacancy |
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Keyword(8) |
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1st Author's Name |
Chihiro Tamura |
1st Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
2nd Author's Name |
Tatsuya Naito |
2nd Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
3rd Author's Name |
Motoyuki Sato |
3rd Author's Affiliation |
Semiconductor Leading Edge technologies, Inc. (Selete) |
4th Author's Name |
Seiji Inumiya |
4th Author's Affiliation |
Semiconductor Leading Edge technologies, Inc. (Selete) |
5th Author's Name |
Ryu Hasunuma |
5th Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
6th Author's Name |
Kikuo Yamabe |
6th Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
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Speaker |
Author-1 |
Date Time |
2007-06-08 10:30:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2007-42 |
Volume (vol) |
vol.107 |
Number (no) |
no.85 |
Page |
pp.59-64 |
#Pages |
6 |
Date of Issue |
2007-05-31 (SDM) |
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