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| Presentation | 2007-06-08 09:00 Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)  SDM2007-39 Link to ES Tech. Rep. Archives: SDM2007-39 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microwave excited Xe/NH3 plasma are evaluated using Si 2p spectra emitted by soft X-ray (wave length=1050 eV) and the spectra of the valence band for escape angle of 15º and 80º emitted by soft X-ray (wave length=951 eV), respectively. The density of subnitride decreases with an increase in the surface area density of Si atoms. The energy offsets of balance band for Si3N4 formed by the radical nitridation are the same for every Si surface orientation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | silicon nitride film / subnitride / interface / XPS / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-39, pp. 43-48, June 2007. | |
| Paper # | SDM2007-39 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-39 Link to ES Tech. Rep. Archives: SDM2007-39 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals |
| Sub Title (in English) | |
| Keyword(1) | silicon nitride film |
| Keyword(2) | subnitride |
| Keyword(3) | interface |
| Keyword(4) | XPS |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akinobu Teramoto |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Takashi Aratani |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Masaaki Higuchi |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Eiji Ikenaga |
| 4th Author's Affiliation | Japan Synchrotron Radiation Research Institute (JASRI) |
| 5th Author's Name | Hiroshi Nohira |
| 5th Author's Affiliation | Musashi Institute of Technology (Musashi Institute of Technology) |
| 6th Author's Name | Shigetoshi Sugawa |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 7th Author's Name | Tadahiro Ohmi |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 8th Author's Name | Takeo Hattori |
| 8th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-06-08 09:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-39 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.43-48 |
| #Pages | 6 |
| Date of Issue | 2007-05-31 (SDM) |
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