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| Presentation | 2007-06-08 15:30 Growth and Characterization of Pr-Oxide-Based Dielectric Films on Ge Substrates Mitsuo Sakashita, Nobuyuki Kito (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.)  SDM2007-51 Link to ES Tech. Rep. Archives: SDM2007-51 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A Ge MOSFET with a high-k dielectric film is considered to be an attractive candidate for high performance devices. We investigated film structures and electrical properties of Pr oxide films prepared in various ambient on Ge (001) wafers by pulsed laser deposition. Angle-resolved X-ray photoelectron spectroscopy revealed that GeOx incorporation into the Pr oxide film is obvious, leading to reduction of permittivity, when depositing in Ar ambient, whereas it is suppressed in O2 and the vacuum deposition. Nitridation of Ge substrates prior to Pr oxide deposition is effective in suppressing GeOx incorporation, resulting in improved permittivity. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Pr oxide film / high-k / Ge / Ge nitride film / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-51, pp. 107-111, June 2007. | |
| Paper # | SDM2007-51 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-51 Link to ES Tech. Rep. Archives: SDM2007-51 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and Characterization of Pr-Oxide-Based Dielectric Films on Ge Substrates |
| Sub Title (in English) | |
| Keyword(1) | Pr oxide film |
| Keyword(2) | high-k |
| Keyword(3) | Ge |
| Keyword(4) | Ge nitride film |
| Keyword(5) | |
| Keyword(6) | |
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| 1st Author's Name | Mitsuo Sakashita |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Nobuyuki Kito |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Akira Sakai |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Masaki Ogawa |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Shigeaki Zaima |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-06-08 15:30:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-51 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.107-111 |
| #Pages | 5 |
| Date of Issue | 2007-05-31 (SDM) |
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