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| Presentation | 2007-06-07 14:45 Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL)  SDM2007-34 Link to ES Tech. Rep. Archives: SDM2007-34 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The depth profiling of chemical composition and defect state density in tensile- and compressive-SiNx films formed on chemical oxide/Si(100) by plasma CVD method using Si2H6+NH3 or Si2H6+N2 gas mixture at 400ºC were evaluated by x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS) at each step of oxide thinning in a dilute HF solution. From the depth profile of chemical composition of the tensile-SiNx, which was determined from the change in XPS core line spectra at each thinning step, we have found that the oxygen content increases near the sample surface and in the region within ~3nm from Si(100) substrate. In the case of compressive-SiNx, diffusion and incorporation of oxygen atoms into the films were suppressed with an increment of the nitrogen content by ~10at.% in the film as compared to the tensile-SiNx case. The PYS analysis shows that the filled defects state density in the energy region corresponding to Si bandgap for tensile-SiNx was~2x1017cm-2eV-1 in Si midgap, being 5times larger than tensile-SiNx. From the correlation between profiles of oxygen and defect density, It is suggested that the oxygen incorporation into SiNx films within ~20 at.% is responsible for the defect generation | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiNx film / X-ray photoelectron spectroscopy / Total photoelectron yield spectroscopy / SONOS / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-34, pp. 17-22, June 2007. | |
| Paper # | SDM2007-34 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-34 Link to ES Tech. Rep. Archives: SDM2007-34 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD |
| Sub Title (in English) | |
| Keyword(1) | SiNx film |
| Keyword(2) | X-ray photoelectron spectroscopy |
| Keyword(3) | Total photoelectron yield spectroscopy |
| Keyword(4) | SONOS |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masahi Miura |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Akio Ohta |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Hideki Murakami |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Seiichiro Higashi |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 6th Author's Name | Masayuki Kohno |
| 6th Author's Affiliation | TOKYO ELECTRON AT. SPA Development Engineering Dept. (TEL) |
| 7th Author's Name | Tatsuo Nishida |
| 7th Author's Affiliation | TOKYO ELECTRON AT. SPA Development Engineering Dept. (TEL) |
| 8th Author's Name | Toshio Nakanishi |
| 8th Author's Affiliation | TOKYO ELECTRON AT. SPA Development Engineering Dept. (TEL) |
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| Speaker | Author-1 |
| Date Time | 2007-06-07 14:45:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-34 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.17-22 |
| #Pages | 6 |
| Date of Issue | 2007-05-31 (SDM) |
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