Paper Abstract and Keywords |
Presentation |
2007-06-07 13:30
Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba) SDM2007-31 Link to ES Tech. Rep. Archives: SDM2007-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we have developed an analytical technique of the electron and hole trap distribution in the MONOS structure. Moreover, we have also developed a microscopic model of the origin of the charge trap. Electron and hole trap distributions were analyzed using a combination of avalanche charge injection and C-V measurement with varying thicknesses of the nitride layers in the MONOS structures. We have consequently found that electrons mainly located at both top and bottom oxide/nitride interfaces, whereas holes locate at the same interfaces as well as in the nitride bulk. We also found that the electron and hole traps are originated from 3-fold coordinated oxygen and silicon dangling bond respectively. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MONOS / SONOS / Trap / Distribution / Energy level / Avalanche injection / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 85, SDM2007-31, pp. 1-6, June 2007. |
Paper # |
SDM2007-31 |
Date of Issue |
2007-05-31 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2007-31 Link to ES Tech. Rep. Archives: SDM2007-31 |
Conference Information |
Committee |
SDM |
Conference Date |
2007-06-07 - 2007-06-08 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hiroshima Univ. ( Faculty Club) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Sci. & Technol. for Thin Dielectrics for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2007-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory |
Sub Title (in English) |
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Keyword(1) |
MONOS |
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SONOS |
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Trap |
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Distribution |
Keyword(5) |
Energy level |
Keyword(6) |
Avalanche injection |
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1st Author's Name |
Takeshi Ishida |
1st Author's Affiliation |
Hitachi, Ltd., Central Research Laboratory (Hitachi) |
2nd Author's Name |
Renichi Yamada |
2nd Author's Affiliation |
Hitachi, Ltd., Central Research Laboratory (Hitachi) |
3rd Author's Name |
Kazuyoshi Torii |
3rd Author's Affiliation |
Hitachi, Ltd., Central Research Laboratory (Hitachi) |
4th Author's Name |
Kenji Shiraishi |
4th Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
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Speaker |
Author-1 |
Date Time |
2007-06-07 13:30:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2007-31 |
Volume (vol) |
vol.107 |
Number (no) |
no.85 |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2007-05-31 (SDM) |
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