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| Presentation | 2007-04-20 15:45 Degradation analysis of GaInAsP/InP laser diode Hiroyuki Ichikawa, Masashi Ito, Chie Fukuda, Kotaro Hamada, Akira Yamaguchi, Takashi Nakabayashi (Sumitomo Electric Industries)  R2007-6 CPM2007-6 OPE2007-6 Link to ES Tech. Rep. Archives: CPM2007-6 OPE2007-6 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | ESD-induced degradation is one of the serious reliability problems of GaInAsP/InP LD. We have conducted an analysis on ESD-induced degradation, and clarified the principal mechanisms of degradations under the forward- and reverse-biased voltage conditions. In the case of forward-biased ESD, heating by light absorption at the active layer at a facet is the main cause of degradation. The mechanism of degradation induced by reverse-biased ESD is different. We found out that degradation is caused by the concentration of high electric field on a MQW. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaInAsP / InP / ESD / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 7, R2007-6, pp. 29-33, April 2007. | |
| Paper # | R2007-6 | |
| Date of Issue | 2007-04-13 (R, CPM, OPE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2007-6 CPM2007-6 OPE2007-6 Link to ES Tech. Rep. Archives: CPM2007-6 OPE2007-6 |
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| Conference Information | |
| Committee | CPM OPE R |
| Conference Date | 2007-04-20 - 2007-04-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | R |
| Conference Code | 2007-04-CPM-OPE-R |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Degradation analysis of GaInAsP/InP laser diode |
| Sub Title (in English) | |
| Keyword(1) | GaInAsP |
| Keyword(2) | InP |
| Keyword(3) | ESD |
| Keyword(4) | |
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| Keyword(8) | |
| 1st Author's Name | Hiroyuki Ichikawa |
| 1st Author's Affiliation | Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries) |
| 2nd Author's Name | Masashi Ito |
| 2nd Author's Affiliation | Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries) |
| 3rd Author's Name | Chie Fukuda |
| 3rd Author's Affiliation | Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries) |
| 4th Author's Name | Kotaro Hamada |
| 4th Author's Affiliation | Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries) |
| 5th Author's Name | Akira Yamaguchi |
| 5th Author's Affiliation | Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries) |
| 6th Author's Name | Takashi Nakabayashi |
| 6th Author's Affiliation | Sumitomo Electric Industries, Ltd. (Sumitomo Electric Industries) |
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| Speaker | Author-1 |
| Date Time | 2007-04-20 15:45:00 |
| Presentation Time | 25 minutes |
| Registration for | R |
| Paper # | R2007-6, CPM2007-6, OPE2007-6 |
| Volume (vol) | vol.107 |
| Number (no) | no.7(R), no.8(CPM), no.9(OPE) |
| Page | pp.29-33 |
| #Pages | 5 |
| Date of Issue | 2007-04-13 (R, CPM, OPE) |
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