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| Presentation | 2007-04-13 13:50 Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention Hiroshi Sunamura, Taeko Ikarashi, Ayuka Morioka, Setsu Kotsuji, Makiko Oshida, Nobuyuki Ikarashi, Shinji Fujieda, Hirohito Watanabe (NEC)  ICD2007-15 Link to ES Tech. Rep. Archives: ICD2007-15 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For retention improvement in scaled SONOS-type non-volatile memory, deep traps with controllable density were formed by adding metal impurities into gate oxide. We find that Ti additives create deep traps in silicon dioxide, with high electron capture efficiency. Charge storage node changed from TiO2 floating-gate (15Å) to nano-crystals (3Å), and further to atomic-sized traps (0.4Å) by decreasing Ti amount. Discrete atomic-sized traps successfully suppressed lateral charge redistribution, improving retention at 150oC. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SONOS / traps / metal impurities / atomic-sized traps / lateral charge redistribution / high temperature retention / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 1, ICD2007-15, pp. 83-88, April 2007. | |
| Paper # | ICD2007-15 | |
| Date of Issue | 2007-04-05 (ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ICD2007-15 Link to ES Tech. Rep. Archives: ICD2007-15 |
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| Conference Information | |
| Committee | ICD |
| Conference Date | 2007-04-12 - 2007-04-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2007-04-ICD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression of lateral charge redistribution using advanced impurity trap memory for improving high temperature retention |
| Sub Title (in English) | |
| Keyword(1) | SONOS |
| Keyword(2) | traps |
| Keyword(3) | metal impurities |
| Keyword(4) | atomic-sized traps |
| Keyword(5) | lateral charge redistribution |
| Keyword(6) | high temperature retention |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroshi Sunamura |
| 1st Author's Affiliation | NEC Corporation (NEC) |
| 2nd Author's Name | Taeko Ikarashi |
| 2nd Author's Affiliation | NEC Corporation (NEC) |
| 3rd Author's Name | Ayuka Morioka |
| 3rd Author's Affiliation | NEC Corporation (NEC) |
| 4th Author's Name | Setsu Kotsuji |
| 4th Author's Affiliation | NEC Corporation (NEC) |
| 5th Author's Name | Makiko Oshida |
| 5th Author's Affiliation | NEC Corporation (NEC) |
| 6th Author's Name | Nobuyuki Ikarashi |
| 6th Author's Affiliation | NEC Corporation (NEC) |
| 7th Author's Name | Shinji Fujieda |
| 7th Author's Affiliation | NEC Corporation (NEC) |
| 8th Author's Name | Hirohito Watanabe |
| 8th Author's Affiliation | NEC Corporation (NEC) |
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| Speaker | Author-1 |
| Date Time | 2007-04-13 13:50:00 |
| Presentation Time | 30 minutes |
| Registration for | ICD |
| Paper # | ICD2007-15 |
| Volume (vol) | vol.107 |
| Number (no) | no.1 |
| Page | pp.83-88 |
| #Pages | 6 |
| Date of Issue | 2007-04-05 (ICD) |
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