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Paper Abstract and Keywords
Presentation 2007-03-15 13:05
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories
Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) Link to ES Tech. Rep. Archives: SDM2006-254
Abstract (in Japanese) (See Japanese page) 
(in English) A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta2O5 film between GeSbTe (GST) and a W plug. The Ta2O5 interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and SiO2 underneath. Nonetheless, sufficient current flows through the interfacial layer due to direct tunneling. A low programming power of 1.5 V/100 µA can therefore be obtained even on a W plug with a diameter of 180 nm fabricated using standard 0.13-m CMOS technology. In addition, the uniformity and repeatability of cell resistance are excellent because of the inherently stable Ta2O5 film properties.
Keyword (in Japanese) (See Japanese page) 
(in English) Phase-change Memory / GeSbTe / Interfacial layer / / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 593, SDM2006-254, pp. 1-6, March 2007.
Paper # SDM2006-254 
Date of Issue 2007-03-08 (SDM) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: SDM2006-254

Conference Information
Committee SDM  
Conference Date 2007-03-15 - 2007-03-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2007-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories 
Sub Title (in English)  
Keyword(1) Phase-change Memory  
Keyword(2) GeSbTe  
Keyword(3) Interfacial layer  
Keyword(4)  
Keyword(5)  
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Keyword(7)  
Keyword(8)  
1st Author's Name Yuichi Matsui  
1st Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
2nd Author's Name Kenzo Kurotsuchi  
2nd Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
3rd Author's Name Osamu Tonomura  
3rd Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
4th Author's Name Takahiro Morikawa  
4th Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
5th Author's Name Masaharu Kinoshita  
5th Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
6th Author's Name Yoshihisa Fujisaki  
6th Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
7th Author's Name Nozomu Matsuzaki  
7th Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
8th Author's Name Satoru Hanzawa  
8th Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
9th Author's Name Motoyasu Terao  
9th Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
10th Author's Name Norikatsu Takaura  
10th Author's Affiliation Hitachi Ltd., Central Research Laboratory (Hitachi)
11th Author's Name Hiroshi Moriya  
11th Author's Affiliation Hitachi Ltd., Mechanical Engineering Research Laboratory (Hitachi)
12th Author's Name Tomio Iwasaki  
12th Author's Affiliation Hitachi Ltd., Mechanical Engineering Research Laboratory (Hitachi)
13th Author's Name Masahiro Moniwa  
13th Author's Affiliation Renesas Technology Corporation (Renesas)
14th Author's Name Tsuyoshi Koga  
14th Author's Affiliation Renesas Technology Corporation (Renesas)
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Speaker Author-1 
Date Time 2007-03-15 13:05:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2006-254 
Volume (vol) vol.106 
Number (no) no.593 
Page pp.1-6 
#Pages
Date of Issue 2007-03-08 (SDM) 


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