Paper Abstract and Keywords |
Presentation |
2007-03-15 13:05
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas) Link to ES Tech. Rep. Archives: SDM2006-254 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is significantly reduced by inserting a very thin Ta2O5 film between GeSbTe (GST) and a W plug. The Ta2O5 interfacial layer works not only as a heat insulator enabling effective heat generation in GST but also as an adhesion layer between GST and SiO2 underneath. Nonetheless, sufficient current flows through the interfacial layer due to direct tunneling. A low programming power of 1.5 V/100 µA can therefore be obtained even on a W plug with a diameter of 180 nm fabricated using standard 0.13-m CMOS technology. In addition, the uniformity and repeatability of cell resistance are excellent because of the inherently stable Ta2O5 film properties. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Phase-change Memory / GeSbTe / Interfacial layer / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 593, SDM2006-254, pp. 1-6, March 2007. |
Paper # |
SDM2006-254 |
Date of Issue |
2007-03-08 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: SDM2006-254 |
Conference Information |
Committee |
SDM |
Conference Date |
2007-03-15 - 2007-03-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2007-03-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories |
Sub Title (in English) |
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Keyword(1) |
Phase-change Memory |
Keyword(2) |
GeSbTe |
Keyword(3) |
Interfacial layer |
Keyword(4) |
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Keyword(5) |
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Keyword(6) |
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Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yuichi Matsui |
1st Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
2nd Author's Name |
Kenzo Kurotsuchi |
2nd Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
3rd Author's Name |
Osamu Tonomura |
3rd Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
4th Author's Name |
Takahiro Morikawa |
4th Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
5th Author's Name |
Masaharu Kinoshita |
5th Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
6th Author's Name |
Yoshihisa Fujisaki |
6th Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
7th Author's Name |
Nozomu Matsuzaki |
7th Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
8th Author's Name |
Satoru Hanzawa |
8th Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
9th Author's Name |
Motoyasu Terao |
9th Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
10th Author's Name |
Norikatsu Takaura |
10th Author's Affiliation |
Hitachi Ltd., Central Research Laboratory (Hitachi) |
11th Author's Name |
Hiroshi Moriya |
11th Author's Affiliation |
Hitachi Ltd., Mechanical Engineering Research Laboratory (Hitachi) |
12th Author's Name |
Tomio Iwasaki |
12th Author's Affiliation |
Hitachi Ltd., Mechanical Engineering Research Laboratory (Hitachi) |
13th Author's Name |
Masahiro Moniwa |
13th Author's Affiliation |
Renesas Technology Corporation (Renesas) |
14th Author's Name |
Tsuyoshi Koga |
14th Author's Affiliation |
Renesas Technology Corporation (Renesas) |
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20th Author's Affiliation |
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Speaker |
Author-1 |
Date Time |
2007-03-15 13:05:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2006-254 |
Volume (vol) |
vol.106 |
Number (no) |
no.593 |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2007-03-08 (SDM) |
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