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Paper Abstract and Keywords
Presentation 2007-02-02 10:10
Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.) Link to ES Tech. Rep. Archives: ED2006-250 SDM2006-238
Abstract (in Japanese) (See Japanese page) 
(in English) An epitaxial Co$_{50}$Fe$_{50}$/MgO/Co$_{50}$Fe$_{50}$ magnetic tunnel junction (MTJ) was fabricated and a relatively high tunnel magnetoresistance (TMR) ratio of 145\% at room temperature (RT) was obtained. Four remanent magnetization states in the single-crystalline Co$_{50}$Fe$_{50}$ electrode, due to the cubic anisotropy with easy axes of the $\langle 110\rangle$ directions, result in four possible angular-dependent TMRs, each separated by more than 20\% at RT. Analysis of the asteroid curve for Co$_{50}$Fe$_{50}$ indicated that the magnetic field along 22.5$^{\circ}$ from the $\langle 110\rangle$ directions made it possible to change the magnetization direction of the selected cell without disturbing those of the half-selected cells. Furthermore, a ternary content addressable memory (TCAM) using the multi-state MTJ was proposed and its operation was analyzed through circuit simulation. In addition to the non-volatility, the proposed TCAM has an advantage to reducing the device count to 1/3 of that for conventional CMOS-based TCAM.
Keyword (in Japanese) (See Japanese page) 
(in English) magnetic tunnel junction / multiple-valued MRAM / ternary content addressable memory / / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 520, ED2006-250, pp. 57-62, Feb. 2007.
Paper # ED2006-250 
Date of Issue 2007-01-25 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685
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Download PDF Link to ES Tech. Rep. Archives: ED2006-250 SDM2006-238

Conference Information
Committee SDM ED  
Conference Date 2007-02-01 - 2007-02-02 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To ED 
Conference Code 2007-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction 
Sub Title (in English)  
Keyword(1) magnetic tunnel junction  
Keyword(2) multiple-valued MRAM  
Keyword(3) ternary content addressable memory  
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1st Author's Name Tetsuya Uemura  
1st Author's Affiliation Hokkaidoi Univ. (Hokkaido Univ.)
2nd Author's Name Takao Marukame  
2nd Author's Affiliation Hokkaidoi Univ. (Hokkaido Univ.)
3rd Author's Name Kenichi Matsuda  
3rd Author's Affiliation Hokkaidoi Univ. (Hokkaido Univ.)
4th Author's Name Masafumi Yamamoto  
4th Author's Affiliation Hokkaidoi Univ. (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2007-02-02 10:10:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2006-250, SDM2006-238 
Volume (vol) vol.106 
Number (no) no.520(ED), no.521(SDM) 
Page pp.57-62 
#Pages
Date of Issue 2007-01-25 (ED, SDM) 


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