Paper Abstract and Keywords |
Presentation |
2007-01-29 13:25
[Invited Talk]
1.3-μm GaInNAs-TQW-RWG Lasers Kouji Nakahara, Koichiro Adachi, Junichi Kasai, Takeshi Kitatani, Masahiro Aoki (Hitachi Ltd., CRL) PN2006-54 OPE2006-136 LQE2006-125 Link to ES Tech. Rep. Archives: OPE2006-136 LQE2006-125 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The GaInNAs has an ideal band-lineup as compared with conventional long-wavelenth acitve materials. We investigated TQW (triple quantum well) structure in terms of high speed operations. In order to improve the crystallinity of GaInNAs-TQW, an Al-free MBE eptaxial system was developed and a TQW structure was optimized. As a result, low threshold current density of 468 A/cm^2 is obtained, which is almost the same as the lowest one grown by MBE. Moreover, it is demonstrated that the record low threshold current of 4.3 mA is achieved in long-wavelength, 1.29 µm, GaInNAs-TQW RWG lasers. In addition, 40-Gb/s direct modulation of the laser is confirmed at 5ºC. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaInNAs / GaAs / MBE / Al / TQW / threshold current density / threhold current / RWG laser |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 515, LQE2006-125, pp. 41-44, Jan. 2007. |
Paper # |
LQE2006-125 |
Date of Issue |
2007-01-22 (PN, OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
PN2006-54 OPE2006-136 LQE2006-125 Link to ES Tech. Rep. Archives: OPE2006-136 LQE2006-125 |
Conference Information |
Committee |
OPE EMT LQE PN |
Conference Date |
2007-01-29 - 2007-01-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka Univ. Convention Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Photonic integrated circuits and devices, swtiching, PLC, fiber devices, waveguide analysis, and others |
Paper Information |
Registration To |
LQE |
Conference Code |
2007-01-OPE-EMT-LQE-PN |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
1.3-μm GaInNAs-TQW-RWG Lasers |
Sub Title (in English) |
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Keyword(1) |
GaInNAs |
Keyword(2) |
GaAs |
Keyword(3) |
MBE |
Keyword(4) |
Al |
Keyword(5) |
TQW |
Keyword(6) |
threshold current density |
Keyword(7) |
threhold current |
Keyword(8) |
RWG laser |
1st Author's Name |
Kouji Nakahara |
1st Author's Affiliation |
Hitachi, Ltd.,Central Research Laboratory (Hitachi Ltd., CRL) |
2nd Author's Name |
Koichiro Adachi |
2nd Author's Affiliation |
Hitachi, Ltd.,Central Research Laboratory (Hitachi Ltd., CRL) |
3rd Author's Name |
Junichi Kasai |
3rd Author's Affiliation |
Hitachi, Ltd.,Central Research Laboratory (Hitachi Ltd., CRL) |
4th Author's Name |
Takeshi Kitatani |
4th Author's Affiliation |
Hitachi, Ltd.,Central Research Laboratory (Hitachi Ltd., CRL) |
5th Author's Name |
Masahiro Aoki |
5th Author's Affiliation |
Hitachi, Ltd.,Central Research Laboratory (Hitachi Ltd., CRL) |
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Speaker |
Author-1 |
Date Time |
2007-01-29 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
PN2006-54, OPE2006-136, LQE2006-125 |
Volume (vol) |
vol.106 |
Number (no) |
no.513(PN), no.514(OPE), no.515(LQE) |
Page |
pp.41-44 |
#Pages |
4 |
Date of Issue |
2007-01-22 (PN, OPE, LQE) |
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