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| Presentation | 2007-01-19 15:50 High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor) Link to ES Tech. Rep. Archives:  ED2006-237 MW2006-190 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mobility in 2DEG, and are attractive for the power switching device in motor driving systems and power supply systems. The device capacitance can be reduced, because the chip area can be shrunken by ultra-low specific on-resistance. Therefore GaN-HEMTs can operate at high-voltage and high-frequency condition, in which the conventional Si power device cannot be applied. The GaN-HEMT with the gate width of 3mm was fabricated and obtained the breakdown voltage of 380V, the on-resistance of 2mOhmcm2 and the maximum drain current of 1.9A. A 13.56MHz class-E amplifier circuit was demonstrated using the fabricated device and achieved the output power of 13.4W with the power efficiency of 91%. Moreover, a 27.1MHz circuit also achieved the output power of 13.8W with the power efficiency of 89.6%. These results show that high voltage GaN-devices are suitable for high frequency switching applications under high DC input voltages. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN-HEMT / Power Device / High Voltage / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 459, ED2006-237, pp. 205-208, Jan. 2007. | |
| Paper # | ED2006-237 | |
| Date of Issue | 2007-01-10 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2006-237 MW2006-190 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2007-01-17 - 2007-01-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2007-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN-HEMT |
| Keyword(2) | Power Device |
| Keyword(3) | High Voltage |
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| Keyword(5) | |
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| 1st Author's Name | Wataru Saito |
| 1st Author's Affiliation | Toshiba Corporation Semiconductor Company (Toshiba Semiconductor) |
| 2nd Author's Name | Tomokazu Domon |
| 2nd Author's Affiliation | Toshiba Corporation Research & Development Center (Toshiba R & D Center) |
| 3rd Author's Name | Kunio Tsuda |
| 3rd Author's Affiliation | Toshiba Corporation Research & Development Center (Toshiba R & D Center) |
| 4th Author's Name | Ichiro Omura |
| 4th Author's Affiliation | Toshiba Corporation Semiconductor Company (Toshiba Semiconductor) |
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| Speaker | Author-1 |
| Date Time | 2007-01-19 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2006-237, MW2006-190 |
| Volume (vol) | vol.106 |
| Number (no) | no.459(ED), no.460(MW) |
| Page | pp.205-208 |
| #Pages | 4 |
| Date of Issue | 2007-01-10 (ED, MW) |
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