講演抄録/キーワード |
講演名 |
2006-10-06 11:00
MOVPE成長GaN薄膜の高密度励起条件における励起子非弾性散乱過程による発光特性 ○中山正昭・田中浩康(阪市大)・安藤雅信・上村俊也(豊田合成) エレソ技報アーカイブへのリンク:ED2006-164 CPM2006-101 LQE2006-68 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phase epitaxy under intense excitation conditions in a wide temperature range from 10 to 300 K. It is found that there are two types of PL band peculiar to intense excitation conditions. In a low temperature region below 80 K, the PL process is dominated by exciton-exciton scattering, the so-called P emission. On the other hand, in a high temperature region above $\sim120$ K, a PL band, which is different from the P emission, appears. The energy spacing between the new PL band and the fundamental A exciton linearly increases with an increase in temperature. The energy spacing is estimated to be zero at absolute zero temperature by extrapolation of the temperature dependence. These PL profiles indicate that the PL band observed in the high temperature regime originates from exciton-electron scattering. Furthermore, we have confirmed that the exciton-electron scattering process produces optical gain leading to stimulated emission at room temperature. |
キーワード |
(和) |
窒化ガリウム / 励起子 / 発光 / 励起子-励起子散乱 / 励起子-電子散乱 / 有機金属気相エピタキシー / 光学利得 / 誘導放出 |
(英) |
GaN / exciton / photoluminescence / exciton-exciton scattering / exciton-electron scattering / MOVPE / optical gain / stimulated emission |
文献情報 |
信学技報, vol. 106, no. 271, LQE2006-68, pp. 69-73, 2006年10月. |
資料番号 |
LQE2006-68 |
発行日 |
2006-09-28 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
エレソ技報アーカイブへのリンク:ED2006-164 CPM2006-101 LQE2006-68 |
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