IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2006-10-06 10:20
Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) Link to ES Tech. Rep. Archives: ED2006-163 CPM2006-100 LQE2006-67
Abstract (in Japanese) (See Japanese page) 
(in English) Intersubband transition (ISBT) in GaN/AlN multiple quantum structure is an attractive candidate for the mechanism of next generation optical communication devices due to optical communication wavelength (1.55um) carrier transition with ultrafast carrier relaxation time (140fs). On the other hand, the GaN nanocolumn has high crystalline due to dislocation free nature. In this study, we fabricated to photodetector structure and detection characteristics were evaluated, GaN nanocolumn were grown on Si(111) substrate inserting GaN/AlN multiple quantum disk (MQD) by RF-plasma assisted molecular beam epitaxy (RF-MBE). The absorption peak at 1.59um by P-polarization light was observed. On the nanocolumn wafer Ti/Al thick electrode was deposited. The photodetection of GaN/AlN-MQD was occurred by irradiating the 1.47um wavelength laser light at room temperature for the first time. The backside illumination has five times larger detectioncurrent than the surface illumination. Moreover, to confirm whether the principle of operation was ISBT, the dependence of polarization and wavelength etc. were evaluated. Those measurements were suggested that the origin of photodetection be ISBT because behavior to follow to the ISBT phenomenon of photocurrent had been seen.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN/AlN / intersubband transition / optical communication wavelength / photodetector / nanocolumn / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 271, LQE2006-67, pp. 63-67, Oct. 2006.
Paper # LQE2006-67 
Date of Issue 2006-09-28 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: ED2006-163 CPM2006-100 LQE2006-67

Conference Information
Committee ED CPM LQE  
Conference Date 2006-10-05 - 2006-10-06 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2006-10-ED-CPM-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate 
Sub Title (in English)  
Keyword(1) GaN/AlN  
Keyword(2) intersubband transition  
Keyword(3) optical communication wavelength  
Keyword(4) photodetector  
Keyword(5) nanocolumn  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroyuki Uchida  
1st Author's Affiliation Sophia University (Sophia Univ.)
2nd Author's Name Akihiko Kikuchi  
2nd Author's Affiliation Sophia University (Sophia Univ.)
3rd Author's Name Katsumi Kishino  
3rd Author's Affiliation Sophia University (Sophia Univ.)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2006-10-06 10:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2006-163, CPM2006-100, LQE2006-67 
Volume (vol) vol.106 
Number (no) no.269(ED), no.270(CPM), no.271(LQE) 
Page pp.63-67 
#Pages
Date of Issue 2006-09-28 (ED, CPM, LQE) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan