Paper Abstract and Keywords |
Presentation |
2006-10-05 16:10
Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy Kenichi Kosaka, Tatsuya Hujishima (Ritsumeikan Univ.), Kaoru Inoue (FED), Akihiro Hinoki (Ritsumeikan Univ.), Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya (FED), Akira Suzuki (Ritsumeikan Univ./FED), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) Link to ES Tech. Rep. Archives: ED2006-159 CPM2006-96 LQE2006-63 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
(Not available yet) |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
/ / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 269, ED2006-159, pp. 39-43, Oct. 2006. |
Paper # |
ED2006-159 |
Date of Issue |
2006-09-28 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: ED2006-159 CPM2006-96 LQE2006-63 |
|