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| Presentation | 2006-10-05 15:45 Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) Link to ES Tech. Rep. Archives:  ED2006-158 CPM2006-95 LQE2006-62 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passivation were estimated in detail by x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. SiN passivation was performed by catalytic chemical vapor deposition (Cat-CVD), which has been already found to increase two-dimensional electron gas (2DEG) density. In this contribution, we demonstrate that a reduction of AlGaN surface barrier height is actually induced by Cat-CVD SiN passivation, which is most likely to be a significant factor of increase in the 2DEG density of AlGaN/GaN HFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN heterostructure field-effect transistor (HFET) / SiN passivation / catalytic chemical vapor deposition (Cat-CVD) / surface barrier height / x-ray photoelectron spectroscopy (XPS) / capacitance-voltage (C-V) / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 269, ED2006-158, pp. 35-38, Oct. 2006. | |
| Paper # | ED2006-158 | |
| Date of Issue | 2006-09-28 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2006-158 CPM2006-95 LQE2006-62 |
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| Conference Information | |
| Committee | ED CPM LQE |
| Conference Date | 2006-10-05 - 2006-10-06 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2006-10-ED-CPM-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN heterostructure field-effect transistor (HFET) |
| Keyword(2) | SiN passivation |
| Keyword(3) | catalytic chemical vapor deposition (Cat-CVD) |
| Keyword(4) | surface barrier height |
| Keyword(5) | x-ray photoelectron spectroscopy (XPS) |
| Keyword(6) | capacitance-voltage (C-V) |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Norio Onojima |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 2nd Author's Name | Masataka Higashiwaki |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Jun Suda |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Tsunenobu Kimoto |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 5th Author's Name | Takashi Mimura |
| 5th Author's Affiliation | National Institute of Information and CommuniFujitsu laboratory (NICT/Fujitsu Lab.) |
| 6th Author's Name | Toshiaki Matsui |
| 6th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
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| Speaker | Author-1 |
| Date Time | 2006-10-05 15:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2006-158, CPM2006-95, LQE2006-62 |
| Volume (vol) | vol.106 |
| Number (no) | no.269(ED), no.270(CPM), no.271(LQE) |
| Page | pp.35-38 |
| #Pages | 4 |
| Date of Issue | 2006-09-28 (ED, CPM, LQE) |
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