Paper Abstract and Keywords |
Presentation |
2006-09-26 13:00
Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.) Link to ES Tech. Rep. Archives: SDM2006-164 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulations. The ion implantation for channel region was determined so as to realize higher drive current with lower punch-through current. The analysis of mechanical stress for bulk-FinFETs and SOI-FinFETs revealed that the channel stress induced by a stress liner in the bulk-FinFET was larger than that for the SOI-FinFET. In addition, we applied a raised source/drain (RSD) structure to the bulk-FinFETs and optimized ion implantations in the RSD region. The combination of stress liner and RSD structure is found to be efficient for improving drive current of a bulk-FinFET. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
FinFET / drive current / punch-through current / mobility enhancement / optimization / 3-D process simulation / 3-D device simulation / TCAD |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 256, SDM2006-164, pp. 25-29, Sept. 2006. |
Paper # |
SDM2006-164 |
Date of Issue |
2006-09-18 (VLD, SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: SDM2006-164 |
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