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| Presentation | 2006-08-18 09:00 A Test Structure to Separately Analyze CMOSFET Reliabilities along The Channel Width Takashi Ohzone, Eiji Ishii, Takayuki Morishita, Kiyotaka Komoku (Okayama Pref. Univ.), Toshihiro Matsuda, Hideyuki Iwata (Toyama Pref. Univ.) Link to ES Tech. Rep. Archives:  SDM2006-142 ICD2006-96 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A test structure with four kinds of MOSFETs(i.e., [A]([D]) with a short(long) channel-length all over the channel width, [B]([C]) with the short(long) and the long(short) channel-length around the center and the both isolation-edges, respectively) was proposed to separately analyze the location where the hot-carrier-induced CMOSFET reliability is determined around the center or the isolation-edge along the channel-width. The reliability data were almost categorized into three (i.e., [A], [B]/[C] and [D]), which mean that the reliabilities are nearly the same around center or isolation-edge for the CMOSFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CMOSFET / reliability / LDD-type / channel width / isolation / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 206, SDM2006-142, pp. 99-104, Aug. 2006. | |
| Paper # | SDM2006-142 | |
| Date of Issue | 2006-08-10 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2006-142 ICD2006-96 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2006-08-17 - 2006-08-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2006-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Test Structure to Separately Analyze CMOSFET Reliabilities along The Channel Width |
| Sub Title (in English) | |
| Keyword(1) | CMOSFET |
| Keyword(2) | reliability |
| Keyword(3) | LDD-type |
| Keyword(4) | channel width |
| Keyword(5) | isolation |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takashi Ohzone |
| 1st Author's Affiliation | Okayama Prefectural University (Okayama Pref. Univ.) |
| 2nd Author's Name | Eiji Ishii |
| 2nd Author's Affiliation | Okayama Prefectural University (Okayama Pref. Univ.) |
| 3rd Author's Name | Takayuki Morishita |
| 3rd Author's Affiliation | Okayama Prefectural University (Okayama Pref. Univ.) |
| 4th Author's Name | Kiyotaka Komoku |
| 4th Author's Affiliation | Okayama Prefectural University (Okayama Pref. Univ.) |
| 5th Author's Name | Toshihiro Matsuda |
| 5th Author's Affiliation | Toyama Prefectural University (Toyama Pref. Univ.) |
| 6th Author's Name | Hideyuki Iwata |
| 6th Author's Affiliation | Toyama Prefectural University (Toyama Pref. Univ.) |
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| Speaker | Author-1 |
| Date Time | 2006-08-18 09:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2006-142, ICD2006-96 |
| Volume (vol) | vol.106 |
| Number (no) | no.206(SDM), no.207(ICD) |
| Page | pp.99-104 |
| #Pages | 6 |
| Date of Issue | 2006-08-10 (SDM, ICD) |
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